JMTG100N06A vs BSC0901NSATMA1 对比
详细并排对比 JMTG100N06A 出自 Jiejie Micro 和 BSC0901NSATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | JMTG100N06A | BSC0901NSATMA1 |
|---|---|---|
| 品牌 | Jiejie Micro | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.15 | $0.78 |
| Manufacturer | Jiangsu JieJie Microelectronics Co., Ltd | Infineon Technologies |
| 晶体管类型 | N-Channel Power Trench MOSFET | — |
| Drain-Source Voltage V(DSS) | 60 V | — |
| Continuous Drain Current I(D) | 55 A (at V(GS)=10 V, T(C)=25 °C) | — |
| R(DS(on)) Typ @ V(GS)=10 V | 7.7 mΩ | — |
| R(DS(on)) Typ @ V(GS)=4.5 V | 8.9 mΩ | — |
| Gate Threshold Voltage V(GS(th)) Typ | 1.5 V | — |
| 封装 | PDFN5x6-8L (Power DFN 5×6 mm, 8 leads) | TDSON-8-5 (PG-TDSON-8-5) / SuperSO8 5x6 mm |
| 安装类型 | Surface Mount | Surface Mount |
| Plating | Pb-free | — |
| 无卤 | Yes | — |
| RoHS | Compliant | — |
| UIS (Avalanche) Tested | 100 % | — |
| V(DS) Tested | 100 % | — |
| EAS Test Condition | T(J)=25 °C, V(DD)=30 V, V(G)=10 V, L=0.5 mH, R(g)=25 Ω, I(AS)=22 A | — |
| Primary Applications | Load Switch, PWM, DC-DC, Motor Drive | — |
| Part Family | — | OptiMOS 30V |
| Technology | — | N-Channel Trench MOSFET (OptiMOS) |
| Drain-to-Source Voltage (VDS) Max | — | 30 V |
| Continuous Drain Current (ID) at Tc | — | 100 A |
| Continuous Drain Current (ID) at Ta | — | 28 A |
| On-State Resistance RDS(on) Max at VGS=10V | — | 1.9 mOhm |
| On-State Resistance RDS(on) Typ at VGS=10V | — | [DATA_NEEDED: RDS(on) typical] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th)] |
| Gate Charge (Qg) Typ | — | [DATA_NEEDED: Qg total] |
| Avalanche Energy (EAS) | — | 80 mJ |
| Power Dissipation (PD) at Tc | — | 69 W |
| Power Dissipation (PD) at Ta | — | 2.5 W |
| 工作温度范围 | — | -55C to +150C |
| 湿敏等级（MSL） | — | 1 |
| Built-in Body Diode | — | Yes |
| RoHS 状态 | — | Compliant |
| Configuration | — | Single N-Channel with Built-in Diode |