K3K8K80BM-MGCP vs K3K9K90BM-JGCT Comparación
Comparación detallada lado a lado de K3K8K80BM-MGCP por Samsung Electronics y K3K9K90BM-JGCT por Samsung Electronics. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Samsung Electronics
K3K9K90BM-JGCT - Samsung LPDDR5 SDRAM | Samsung Electronics
K3K9K90BM-JGCT ✓ ActivoComparación de especificaciones
| Parámetro | K3K8K80BM-MGCP | K3K9K90BM-JGCT |
|---|---|---|
| Marca | Samsung Electronics | Samsung Electronics |
| Categoría | Memory ICs | Memory ICs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,00 | $9,20 |
| Tipo de memoria | LPDDR5 SDRAM (DRAM) | LPDDR5 SDRAM |
| Density | 64 Gb | [DATA_NEEDED: Density] |
| Organización de memoria | 2G x 32 | [DATA_NEEDED: Organization] |
| Velocidad de datos | 6400 Mbps | [DATA_NEEDED: Data Rate] |
| Interfaz | LPDDR5 (CMOS) | [DATA_NEEDED: Channel configuration] |
| Encapsulado | FBGA-315 (PBGA315) | — |
| Supply Voltages | 500 mV, 900 mV, 1.05 V, 1.8 V | — |
| Temperatura de funcionamiento | -25C to +85C | [DATA_NEEDED: Operating Temperature Range] |
| Tipo de montaje | Surface Mount | Surface Mount |
| Technology | CMOS | — |
| Memory Category | Volatile DRAM | — |
| Estado RoHS | Compliant | [DATA_NEEDED: RoHS Status] |
| Lead Free | Yes | — |
| Application Class | Specialized ICs / Memory | — |
| I/O Width | 32-bit | — |
| Manufacturer | — | Samsung Electronics |
| Supply Voltage (VDD) | — | [DATA_NEEDED: VDD] |
| Supply Voltage (VDDQ) | — | [DATA_NEEDED: VDDQ] |
| Latencia CAS | — | [DATA_NEEDED: CAS Latency] |
| Refresh | — | [DATA_NEEDED: Refresh scheme] |
| Package Type | — | FBGA |
| Package Code | — | BM |
| Speed/Temperature Grade Code | — | JGCT |
| Nivel MSL | — | [DATA_NEEDED: MSL Level] |