K3KL5L50DM-BGCU vs K3LK3L30CM-BGCU Comparación
Comparación detallada lado a lado de K3KL5L50DM-BGCU por Samsung Electronics y K3LK3L30CM-BGCU por Samsung Electronics. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Samsung Electronics
K3KL5L50DM-BGCU - LPDDR5X 128Gb 8533Mbps DRAM | Samsung
K3KL5L50DM-BGCU ✓ ActivoComparación de especificaciones
| Parámetro | K3KL5L50DM-BGCU | K3LK3L30CM-BGCU |
|---|---|---|
| Marca | Samsung Electronics | Samsung Electronics |
| Categoría | Memory ICs | Memory ICs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,00 | $29,60 |
| Tipo de memoria | LPDDR5X SDRAM | LPDDR5X SDRAM (Low Power Double Data Rate 5X) |
| Density | 128 Gb (16 GB) | 64 Gb (8 GB) |
| Velocidad de datos | 8533 Mbps per pin | 8533 Mbps per pin |
| Organización de memoria | [DATA_NEEDED: organization (x)] | [DATA_NEEDED: organization / bus width] |
| Supply Voltage (VDD) | [DATA_NEEDED: VDD voltage] | — |
| Encapsulado | [DATA_NEEDED: package ball count / FBGA code] | 496-ball FBGA (BGC) |
| Tipo de montaje | Surface Mount (BGA) | Surface Mount (BGA) |
| Temperatura de funcionamiento | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Interfaz | LPDDR5X (JEDEC low-power DRAM interface) | — |
| Prefetch | 16n (LPDDR5/5X architecture) | — |
| Power Efficiency | approx. 20% better than LPDDR5 (per Samsung LPDDR5X family page) | Approx. 25% better than previous LPDDR generation (per Samsung LPDDR5X announcement) |
| Latencia CAS | [DATA_NEEDED: CAS latency] | — |
| Refresh | [DATA_NEEDED: refresh scheme] | — |
| Estado RoHS | unknown | [DATA_NEEDED: RoHS status] |
| Production Status | In production (in stock at distributors) | — |
| Nivel MSL | [DATA_NEEDED: moisture sensitivity level] | [DATA_NEEDED: moisture sensitivity level] |
| Die Configuration | — | Stacked DRAM die (multi-die package) |
| Supply Voltage VDD | — | [DATA_NEEDED: VDD voltage] |
| Supply Voltage VDDQ | — | [DATA_NEEDED: VDDQ voltage] |
| Speed vs Prior Generation | — | Up to 1.25x faster than previous generation (per Samsung LPDDR5X announcement) |
| Target Applications | — | AI devices, in-vehicle devices, mobile computing |
| Packaging | — | [DATA_NEEDED: tray / reel and standard quantity] |