K3KL5L50DM-BGCU vs K3LK3L30CM-BGCU 비교
다음의 상세 나란히 비교: K3KL5L50DM-BGCU 제조: Samsung Electronics 및 K3LK3L30CM-BGCU 제조: Samsung Electronics. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | K3KL5L50DM-BGCU | K3LK3L30CM-BGCU |
|---|---|---|
| 브랜드 | Samsung Electronics | Samsung Electronics |
| 카테고리 | Memory ICs | Memory ICs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.00 | $29.60 |
| 메모리 유형 | LPDDR5X SDRAM | LPDDR5X SDRAM (Low Power Double Data Rate 5X) |
| Density | 128 Gb (16 GB) | 64 Gb (8 GB) |
| 데이터 속도 | 8533 Mbps per pin | 8533 Mbps per pin |
| 메모리 구성 | [DATA_NEEDED: organization (x)] | [DATA_NEEDED: organization / bus width] |
| Supply Voltage (VDD) | [DATA_NEEDED: VDD voltage] | — |
| 패키지 | [DATA_NEEDED: package ball count / FBGA code] | 496-ball FBGA (BGC) |
| 실장 유형 | Surface Mount (BGA) | Surface Mount (BGA) |
| 동작 온도 | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| 인터페이스 | LPDDR5X (JEDEC low-power DRAM interface) | — |
| Prefetch | 16n (LPDDR5/5X architecture) | — |
| Power Efficiency | approx. 20% better than LPDDR5 (per Samsung LPDDR5X family page) | Approx. 25% better than previous LPDDR generation (per Samsung LPDDR5X announcement) |
| CAS 레이턴시 | [DATA_NEEDED: CAS latency] | — |
| Refresh | [DATA_NEEDED: refresh scheme] | — |
| RoHS 상태 | unknown | [DATA_NEEDED: RoHS status] |
| Production Status | In production (in stock at distributors) | — |
| MSL 레벨 | [DATA_NEEDED: moisture sensitivity level] | [DATA_NEEDED: moisture sensitivity level] |
| Die Configuration | — | Stacked DRAM die (multi-die package) |
| Supply Voltage VDD | — | [DATA_NEEDED: VDD voltage] |
| Supply Voltage VDDQ | — | [DATA_NEEDED: VDDQ voltage] |
| Speed vs Prior Generation | — | Up to 1.25x faster than previous generation (per Samsung LPDDR5X announcement) |
| Target Applications | — | AI devices, in-vehicle devices, mobile computing |
| Packaging | — | [DATA_NEEDED: tray / reel and standard quantity] |