K3KL8L80CM-MGCT vs K3KL8L80QM-MUCT Comparación
Comparación detallada lado a lado de K3KL8L80CM-MGCT por Samsung Electronics y K3KL8L80QM-MUCT por Samsung Electronics. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | K3KL8L80CM-MGCT | K3KL8L80QM-MUCT |
|---|---|---|
| Marca | Samsung Electronics | Samsung Electronics |
| Categoría | DRAM | Memory ICs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,00 | $13,40 |
| Tipo de memoria | LPDDR5X SDRAM | LPDDR5X SDRAM |
| Density | 32 Gbit (4 GB) | 32 Gb (4 GB) |
| Organización de memoria | x32 | [DATA_NEEDED: organization (xN bit width)] |
| Max Data Rate | 7500 Mbps | — |
| Clock Frequency | 3750 MHz | — |
| Core Supply Voltage (VDD) | 1.05 V | — |
| I/O Supply Voltage (VDDQ) | 900 mV (500 mV low-power mode) | — |
| VDD2 Supply Voltage | 1.8 V | — |
| Encapsulado | 315-ball FBGA | FBGA (original package, 315-ball class) |
| Temperatura de funcionamiento | -25C to +85C | [DATA_NEEDED: operating temperature range] |
| Tipo de montaje | Surface Mount | Surface Mount |
| Interfaz | LPDDR5X (JEDEC LPDDR5 extension) | LPDDR5X channel interface |
| Application Segment | Mobile, Automotive, On-device AI, PC | Mobile / AI edge computing |
| Power Efficiency | ~20-25% improvement vs LPDDR5 (per Samsung) | — |
| Estado RoHS | Compliant (per JLCPCB listing) | [DATA_NEEDED: RoHS status] |
| Nivel MSL | [DATA_NEEDED: MSL Level] | [DATA_NEEDED: moisture sensitivity level] |
| Velocidad de datos | — | [DATA_NEEDED: data rate per pin (Gbps)] |
| Supply Voltage Class | — | [DATA_NEEDED: VDD/VDDQ voltage] |
| Speed Grade | — | QM (per Samsung part numbering) |
| Series | — | LPDDR5X |
| Marca | — | Samsung Semiconductor |
| Packaging Suffix | — | MUCT |