K3KL9L90DM-JGCT vs K3KLALA0DM-MGCU Comparación
Comparación detallada lado a lado de K3KL9L90DM-JGCT por Samsung Electronics y K3KLALA0DM-MGCU por Samsung Electronics. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Samsung Electronics
K3KL9L90DM-JGCT - LPDDR5X DRAM 16Gbit FBGA-315 | Samsung
K3KL9L90DM-JGCT ✓ ActivoComparación de especificaciones
| Parámetro | K3KL9L90DM-JGCT | K3KLALA0DM-MGCU |
|---|---|---|
| Marca | Samsung Electronics | Samsung Electronics |
| Categoría | Memory ICs | Memory ICs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $65,18 | $0,00 |
| Tipo de memoria | LPDDR5X SDRAM | LPDDR5X SDRAM |
| Density | 16 Gbit | 16 Gbit (2 GB) per die |
| Encapsulado | FBGA-315 | 315-ball FBGA |
| Tipo de montaje | Surface Mount | Surface Mount |
| Temperatura de funcionamiento | -25C to +85C | [DATA_NEEDED: operating temperature range] |
| Velocidad de datos | [DATA_NEEDED: data rate for JGCT speed grade] | — |
| Supply Voltage (VDD) | [DATA_NEEDED: core supply voltage] | — |
| I/O Voltage (VDDQ) | [DATA_NEEDED: I/O supply voltage] | — |
| Organización de memoria | [DATA_NEEDED: x organization] | [DATA_NEEDED: die organization x16/x32] |
| Bank Architecture | [DATA_NEEDED: bank/group configuration] | — |
| Interfaz | [DATA_NEEDED: channel configuration] | LPDDR5X (LPDDR5X-class channel) |
| Estado RoHS | Compliant | [DATA_NEEDED: RoHS status] |
| Nivel MSL | [DATA_NEEDED: moisture sensitivity level] | — |
| Package Dimensions | [DATA_NEEDED: body dimensions] | — |
| AEC-Q100 | [DATA_NEEDED: automotive qualification status] | — |
| Maximum Data Rate | — | 6400 Mbps per pin |
| Supply Voltage - Core (VDD1) | — | [DATA_NEEDED: VDD1 voltage] |
| Supply Voltage - I/O (VDD2/VDDQ) | — | [DATA_NEEDED: VDDQ voltage] |
| Speed Grade Suffix | — | MGCU (6400 Mbps class) |
| Grade | — | Mobile / Low Power Mobile Grade |
| Ball Pitch | — | [DATA_NEEDED: ball pitch mm] |
| Place of Origin | — | Johor, Malaysia (per distributor listing) |
| DRAM Process | — | Advanced DRAM node (EUV-class per Samsung LPDDR5X family) |