K3KL9L90DM-JGCT - LPDDR5X DRAM 16Gbit FBGA-315 | Samsung
N.º de pieza: K3KL9L90DM-JGCT ✓ Activo| Cant. | Precio unitario | Total |
|---|---|---|
| 1 | $81.48 | $81,48 |
| 10 | $77.41 | $774,10 |
| 100 | $73.33 | $7.333,00 |
| 500 | $69.26 | $34.630,00 |
| 1.000 | $65.18 | $65.180,00 |
K3KL9L90DM-JGCT Descripción general
LPDDR (Low Power Double Data Rate) SDRAM is a class of DRAM optimized for power-sensitive systems such as smartphones, tablets, edge-AI accelerators, and automotive infotainment. Sitting within the memory IC hierarchy (DRAM -> SDRAM -> LPDDR family -> LPDDR5X), LPDDR5X devices use a low-voltage interface, deep power-down modes, and advanced bank architectures to maximize bandwidth-per-watt.
Key characteristics of this device include its 16Gbit density per package, FBGA-315 surface-mount package, and an operating temperature range documented at -25C to +85C for family devices. The LPDDR5X interface supports channelized architecture and dynamic voltage/frequency scaling for workload-adaptive power management.
Technically, LPDDR5X devices implement CA training, DFE (decision feedback equalization) on data reads, and link ECC options to sustain multi-gigabit-per-second signaling on PCB traces. Signal integrity on fly-by command/address buses and length-matched data lanes are critical to achieving rated speeds.
Typical applications include flagship smartphone application-processor memory, automotive ADAS domain controllers, AI edge inference modules, and high-performance mobile computing platforms such as tablets and XR headsets.
Design consideration: LPDDR5X routing requires strict length matching and impedance control; consult the Samsung LPDDR5X design guide and SoC memory-controller initialization sequences before layout.
This page synthesizes verified distributor data, family cross-references, and practical design notes not found in a single datasheet source.
Alternativas directas para K3KL9L90DM-JGCT — mismo encapsulado, compatible pin a pin. Se excluyen las piezas de otro encapsulado que requieren retrabajo de la PCB.
Variantes de esta serie
Modelos de la misma serie compatibles directamente con K3KL9L90DM-JGCT (mismo factor de forma y huella) — difiere en Package, Density, Interface, Product Status, Memory Type.
Herramienta de comparación rápida — seleccione piezas alternativas para compararlas lado a lado:
K3KL9L90DM-MGCU
✅ Sustitución directa✓ En stock
$66.4 / unidad
Ver hoja de datos →K3KL8L80DM-JGCT
✅ Sustitución directa ⚠️ Especificaciones sin verificar✓ En stock
$80.7 / unidad
Ver hoja de datos →K3KL2L20DM-JGCT
✅ Sustitución directa ⚠️ Especificaciones sin verificar✓ En stock
$20.8 / unidad
Ver hoja de datos →K3KL9L90CM-MGCT
✅ Sustitución directa✓ En stock
$36.91 / unidad
Ver hoja de datos →K3KL8L80DM-MGCU
✅ Sustitución directa ⚠️ Especificaciones sin verificar✓ En stock
Consulte el precio
Ver hoja de datos →K3KL5L50QM-JGCT
✅ Sustitución directa ⚠️ Especificaciones sin verificar✓ En stock
$64 / unidad
Ver hoja de datos →K3KL9L90DM-JGCT Valores máximos y características eléctricas
| Tipo de memoria | LPDDR5X SDRAM |
| Density | 16 Gbit |
| Encapsulado | FBGA-315 |
| Tipo de montaje | Surface Mount |
| Temperatura de funcionamiento | -25C to +85C |
| Estado RoHS | Compliant |
Guía de configuración de pines de K3KL9L90DM-JGCT fbga-315
Configuración de pines para K3KL9L90DM-JGCT (encapsulado fbga-315). Este CI digital incluye GPIO, interfaces de comunicación (UART, SPI, I2C) y pines de alimentación. Consulte la hoja de datos del fabricante para conocer las funciones alternativas de los pines y las opciones de configuración. Esencial para el diseño de sistemas embebidos y el diseño de PCB.
No hay datos detallados de patillaje disponibles para K3KL9L90DM-JGCT.
Consulte la hoja de datos para ver la configuración completa de patillas.
Aplicaciones típicas
K3KL9L90DM-JGCT es adecuado para 6 aplicacións: Flagship Smartphone Memory, Automotive ADAS Domain Controllers, Edge AI Inference Modules, Tablets and XR Headsets, 5G Modems and Connectivity Platforms, Industrial Vision and Machine Inspection.
Flagship Smartphone Memory
The K3KL9L90DM-JGCT fits flagship smartphone memory subsystems where the application processor demands multi-gigabyte-per-second bandwidth at strict power budgets. Samsung's LPDDR5X platform reaches data rates up to 8.5 Gbps with approximately 20% better power efficiency than LPDDR5, directly extending battery life during sustained camera, gaming, and 5G workloads. The 16 Gbit device density allows multi-chip PoP (Package-on-Package) stacking alongside the SoC. In use, the memory controller initializes CA training and DFE equalization to sustain top speed bins, while dynamic frequency scaling drops the interface to idle during standby, leveraging LPDDR5X deep sleep states. Thermal design must account for DRAM power dissipation under PoP thermal paths.
Recomendado
Automotive ADAS Domain Controllers
Samsung markets its LPDDR5X family for automotive devices, making the K3KL9L90DM-JGCT a candidate for ADAS domain controllers and centralized compute platforms that fuse camera, radar, and LiDAR sensor streams. The -25C to +85C operating range documented for family parts covers cabin-domain environmental requirements. Bandwidth matters: multi-sensor perception pipelines at high resolution require the 8.5 Gbps-class signaling LPDDR5X offers, while the 20% power-efficiency gain versus LPDDR5 reduces cooling burden in sealed ECUs. Designers must confirm AEC-Q100 qualification and PPAP documentation for this exact ordering part number with Samsung, and validate memory-controller initialization sequences against the automotive SoC's supported speed bins before production release.
Recomendado
Edge AI Inference Modules
Edge-AI accelerators running vision and language models are memory-bandwidth-bound, and the K3KL9L90DM-JGCT's LPDDR5X interface provides the multi-Gbps data rates those models demand without desktop-class DRAM power. The 16 Gbit capacity suits model weights and activation buffers in the low-GB range typical of quantized edge deployments. Samsung's roughly 20% efficiency improvement over LPDDR5 translates directly into longer thermal-limited inference duty cycles in fanless enclosures. Implementation uses wide x32/x64 channel configurations with CA training to sustain top bins; multi-channel controllers can aggregate several devices. Compared with LPDDR4-based modules, LPDDR5X delivers substantially higher aggregate bandwidth at similar channel counts, improving tokens-per-second and frames-per-second metrics.
Recomendado
Tablets and XR Headsets
High-resolution tablet displays and XR (VR/AR) headsets combine demanding render pipelines with battery-only operation - exactly the profile LPDDR5X was engineered for. The K3KL9L90DM-JGCT supplies the 16 Gbit working set for high-refresh-rate graphics, while the platform's up-to-8.5 Gbps signaling supports the sustained bandwidth needed for dual-eye high-resolution rendering and low-motion-to-photon latency. The 20% power-efficiency advantage over LPDDR5 is decisive for headset thermal comfort, since passive cooling dominates industrial design. The FBGA-315 package supports compact layouts near the application processor, shortening flight-time-critical traces. Multi-device channel aggregation is standard in these platforms; follow SoC vendor layout guidelines for length matching and power-domain sequencing.
Recomendado
5G Modems and Connectivity Platforms
5G baseband processors moving multi-gigabit air-interface data require memory bandwidth that keeps pace with modem throughput; the K3KL9L90DM-JGCT's LPDDR5X interface provides this at low standby power, critical for always-on cellular connectivity. Samsung's LPDDR5X delivers up to 8.5 Gbps per the official product page, sufficient for mmWave-class data paths, while deep power-down states minimize drain between burst transfers - a key metric for battery-powered CPE and mobile hotspots. The -25C to +85C operating range supports outdoor customer-premises equipment. In deployment, the modem memory controller typically runs conservative speed bins with strict power-supply noise budgets; follow Samsung and SoC vendor guidance on VDDQ decoupling to protect signal integrity at speed.
Recomendado
Industrial Vision and Machine Inspection
Industrial machine-vision inspection systems stream multiple high-frame-rate camera feeds into inference pipelines, making memory bandwidth the system bottleneck. The K3KL9L90DM-JGCT addresses this with LPDDR5X-class throughput (family rates up to 8.5 Gbps per Samsung) and 16 Gbit of working memory for frame buffers and neural inference. The -25C to +85C documented operating range tolerates factory-floor ambient swings inside sealed enclosures. Compared with DDR4-based industrial SODIMM designs, an LPDDR5X soldered-down FBGA solution saves board space, eliminates socket reliability issues, and improves bandwidth-per-watt in fanless systems. Design attention focuses on power integrity at speed bins, CA training stability across temperature, and confirming the SoC memory controller's support for LPDDR5X initialization sequences.
Recomendado
Resumen de productos recomendados
Datos de referencia de ingeniería para K3KL9L90DM-JGCT — comparación, orientación de diseño e información de cumplimiento.
Guía de selección
Comparación con alternativas
| Parámetro | Este producto | K3KL9L90DM-MGCU | K3KL8L80DM-JGCT | K3KL9L90CM-MGCT | K3KL2L20DM-JGCT |
|---|---|---|---|---|---|
| Package | FBGA-315 | FBGA-315 | FBGA-315 | FBGA | FBGA-315 |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics |
| Memory Technology | LPDDR5X | LPDDR5X | LPDDR5X | LPDDR5X | LPDDR5X |
| Density | 16 Gbit | 16 Gbit | 8 Gbit | 64 Gb | 2 Gbit |
Diferenciadores clave
- Top-tier platform bandwidth (frente a K3KL8L80DM-JGCT)
- Published distributor pricing availability (frente a K3KL9L90CM-MGCT)
- Power efficiency advantage over prior generation (frente a LPDDR5-class alternatives)
Notas de diseño
LPDDR5X signaling at multi-Gbps data rates demands rigorous PCB constraints: length-match data lanes within group skew budgets, control impedance (typically 40-60 ohm ODT-dependent), and reference solid ground planes under all DQ/DBI lines. CA training compensates command/address flight-time skew, but excessive trace mismatch consumes training range margin. Follow the SoC vendor's memory layout guide in combination with Samsung's LPDDR5X design rules; route the fly-by CA bus per controller topology and simulate eye diagrams on lengths beyond 50 mm.
LPDDR5X uses separate core (VDD), I/O (VDDQ), and VDD2 power domains with dynamic voltage and frequency scaling. Estimate power dissipation from the DRAM's IDD specifications for your actual speed bin and read/write mix - do not size rails on worst-case numbers alone. Decouple VDDQ with low-ESR ceramic capacitors placed within 2-3 mm of ball vias; PDN impedance must stay flat across the tens-of-MHz to hundreds-of-MHz range where read bursts draw current. Verify DVFS rail transient response with the power-management IC during speed transitions.
FBGA-315 memory cannot be reworked or swapped after assembly without BGA reballing equipment, so part-number suffix verification (JGCT vs MGCU vs other speed-bin codes) must happen at BOM release, not at rework. Confirm the exact speed bin against your memory controller's qualified list - LPDDR5X initialization sequences differ per bin. Also confirm AEC-Q100 and PPAP documentation early for automotive builds; consumer-grade suffixes may not carry automotive qualification even when temperature ranges look adequate.
Información de cumplimiento
JLCPCB lists the sibling part K3KL9L90DM-MGCU as ROHS. REACH, halogen-free, and conflict-minerals declarations not found in provided data; request formal compliance certificates from Samsung or authorized distributors.
