K4A4G085WF-BITD vs MT40A512M8RH-075E:B Comparación
Comparación detallada lado a lado de K4A4G085WF-BITD por Samsung Electronics y MT40A512M8RH-075E:B por Micron Technology. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Micron Technology
MT40A512M8RH-075E:B - DDR4 4Gb 2666 MT/s SDRAM | Micron
MT40A512M8RH-075E:B ✓ ActivoComparación de especificaciones
| Parámetro | K4A4G085WF-BITD | MT40A512M8RH-075E:B |
|---|---|---|
| Marca | Samsung Electronics | Micron Technology |
| Categoría | DRAM | Memory ICs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $2,65 | $2,15 |
| Tipo de memoria | DDR4 SDRAM | DDR4 SDRAM |
| Density | 4 Gbit | 4 Gbit |
| Organización de memoria | 512M x 8 | 512M x 8 |
| Speed | 2666 Mbps (MT/s) | — |
| Supply Voltage (VDD) | 1.2 V | — |
| VPP Voltage | 2.5 V | — |
| Temperatura de funcionamiento | -40C to +95C | [DATA_NEEDED: operating temperature range (standard grade)] |
| Encapsulado | 78-ball FBGA (78FBGA) | 78-FBGA (9 x 10.5 mm), TFBGA |
| Bank Architecture | 8 banks x 4 bank groups | — |
| Burst Length | BL8 | — |
| Latencia CAS | CL19 (typical at 2666 Mbps) | — |
| Tipo de montaje | Surface Mount (BGA) | Surface Mount |
| Interfaz | Parallel, DDR4 SSTL12 | — |
| Refresh | Self-refresh and auto-refresh (8K/64ms per JEDEC DDR4) | Refresh max interval extension at extended TC temperature range (125C capable per family features) |
| Termination | ODT / dynamic ODT | — |
| Data Mask | DM supported (x8) | — |
| Application Grade | Industrial | — |
| Velocidad de datos | — | 2666 MT/s (DDR4-2666) |
| Clock Frequency | — | 1333 MHz (1.33 GHz) |
| VDD Supply Voltage | — | 1.2 V +/-60 mV |
| VDDQ Supply Voltage | — | 1.2 V +/-60 mV |
| VPP Supply Voltage | — | 2.5 V, -125 mV/+250 mV |
| Tipo de interfaz | — | Parallel |
| I/O Structure | — | 1.2V pseudo open-drain |
| Tensión de referencia | — | On-die internal adjustable VREFDQ generation |
| Speed Grade Suffix | — | -075E |
| Estado RoHS | — | [DATA_NEEDED: RoHS status] |
| Packaging Option Suffix | — | :B (ball map B designation per Mouser listing) |