K4A8G165WC-BCPB vs K4AAG165WA-BCPB Comparación
Comparación detallada lado a lado de K4A8G165WC-BCPB por Samsung Electronics y K4AAG165WA-BCPB por Samsung Electronics. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Samsung Electronics
K4A8G165WC-BCPB - 8Gb DDR4-2133 SDRAM 96-FBGA | Samsung
K4A8G165WC-BCPB ✓ ActivoSamsung Electronics
K4AAG165WA-BCPB - 16Gb DDR4 SDRAM 3200Mbps 1.2V | Samsung
K4AAG165WA-BCPB ✓ ActivoComparación de especificaciones
| Parámetro | K4A8G165WC-BCPB | K4AAG165WA-BCPB |
|---|---|---|
| Marca | Samsung Electronics | Samsung Electronics |
| Categoría | Memory ICs | Memory ICs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $1,31 | $63,79 |
| Tipo de memoria | DDR4 SDRAM (volatile DRAM) | Volatile DRAM (DDR4 SDRAM) |
| Tamaño de memoria | 8 Gb | — |
| Memory Organization | 512M x 16 | — |
| Velocidad de datos | DDR4-2133 (2133 Mbps/pin) | 3200 Mbps |
| Tensión de alimentación | 1.2 V | — |
| Operating Voltage Range | 1.14 V to 1.26 V | — |
| Interfaz | DDR4 (16-bit data bus) | — |
| Encapsulado | 96-ball FBGA (TFBGA) | FBGA-96 |
| Die Generation | C-die (1Y nm class) | — |
| Tipo de montaje | Surface Mount | Surface Mount |
| Temperatura de funcionamiento | 0C to +95C | [DATA_NEEDED: operating temperature for BCPB grade] |
| Características | Auto precharge, asynchronous reset, CRC, ZQ calibration, dynamic ODT, data mask | — |
| Termination | On-die termination (ODT), dynamic | — |
| Nivel MSL | [DATA_NEEDED: MSL Level] | — |
| Estado RoHS | Compliant | [DATA_NEEDED: RoHS status] |
| Standard | JEDEC DDR4 SDRAM | — |
| Technology | — | DDR4 |
| Density | — | 16 Gb |
| Organización de memoria | — | 1G x 16 |
| Supply Voltage (VDD) | — | 1.2 V |
| Interface Voltage (VDDQ) | — | 1.2 V |
| Memory Format | — | DRAM |
| Packaging | — | Tray |
| Product Status | — | Active |
| Power Consumption | — | 25% lower than DDR3 (per Samsung DDR4 family) |
| Bank Group Architecture | — | Yes (DDR4 internal bank groups) |
| On-Die Termination (ODT) | — | Yes |
| Max Capacity Family | — | Up to 32GB component (Samsung DDR4 family) |