K9ADGD8S0A vs K9HQGY8S5M Comparación

Comparación detallada lado a lado de K9ADGD8S0A por Samsung Electronics y K9HQGY8S5M por Samsung Electronics. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.

Samsung Electronics
K9ADGD8S0A K9ADGD8S0A - 3D V-NAND TCAT Flash Memory Die | Samsung

K9ADGD8S0A - 3D V-NAND TCAT Flash Memory Die | Samsung

K9ADGD8S0A ✗ Fin de vida
Samsung Electronics
K9HQGY8S5M K9HQGY8S5M - 3D V-NAND Flash, FBGA-316 | Samsung | SSD Storage

K9HQGY8S5M - 3D V-NAND Flash, FBGA-316 | Samsung | SSD Storage

K9HQGY8S5M ✓ Activo

Comparación de especificaciones

Parámetro K9ADGD8S0A K9HQGY8S5M
Marca Samsung Electronics Samsung Electronics
Categoría EEPROM Memory ICs
Estado del ciclo de vida Fin de vida Activo
Estado del stock In Stock In Stock
Precio unitario (USD) $0,00 $0,00
Device Type 3D V-NAND flash memory bare die —
Process Technology Terabit Cell Array Transistor (TCAT) —
Architecture 3D vertical NAND (V-NAND) —
Form Factor Bare die (unpackaged) —
Found In Samsung K9HQGY8S5M-CCK0 and K9LPGY8S1M-CCK0 packages —
Known Application Samsung 850 Pro 128 GB SSD —
Memory Class Non-volatile NAND flash Non-volatile NAND flash
Manufacturer Samsung Electronics Samsung Electronics
Documented By TechInsights report SAR-1407-802 —
Capacity [DATA_NEEDED: die capacity] —
Tensión de alimentación [DATA_NEEDED: supply voltage] [DATA_NEEDED: VCC range]
Interfaz [DATA_NEEDED: interface type] NAND (ONFI/Toggle-style asynchronous interface) - exact timing mode [DATA_NEEDED: interface timing mode]
Page Size [DATA_NEEDED: page size] [DATA_NEEDED: page size]
Program/Erase Cycles [DATA_NEEDED: endurance] [DATA_NEEDED: P/E endurance rating]
Temperatura de funcionamiento [DATA_NEEDED: operating temperature] [DATA_NEEDED: operating temperature range]
Encapsulado [DATA_NEEDED: package] —
Product Type — 3D V-NAND Flash Memory (stacked, client NAND)
Package Type — 316-ball Fine Pitch BGA (FBGA-316)
Die Configuration — 4 x K9ADGD8S0A V-NAND dies (per TechInsights package analysis)
NAND Technology — 32-layer pMLC 3D V-NAND (per Samsung 850 Pro 256 GB analysis)
Density — [DATA_NEEDED: total bit density]
Block Size — [DATA_NEEDED: block size]
Tipo de montaje — Surface Mount (BGA)
Estado RoHS — [DATA_NEEDED: RoHS status]
Nivel MSL — [DATA_NEEDED: moisture sensitivity level]
Original Application — Samsung SSD 850 Pro solid-state drive

Hojas de datos y recursos

Examinar todos los productos Crear BOM Solicitar cotización