K9HCG08U1M vs K9DVGB8U5M Comparación
Comparación detallada lado a lado de K9HCG08U1M por Samsung Electronics y K9DVGB8U5M por Samsung Electronics. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Samsung Electronics
K9HCG08U1M - 64Gb 8Gx8 MLC NAND Flash | Samsung | SSD Storage
K9HCG08U1M ✓ Activo
Comparación de especificaciones
| Parámetro | K9HCG08U1M | K9DVGB8U5M |
|---|---|---|
| Marca | Samsung Electronics | Samsung Electronics |
| Categoría | Memory ICs | Memory ICs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,00 | $3,05 |
| Memory Technology | MLC NAND Flash | — |
| Total Capacity | 64 Gbit | — |
| Organización de memoria | 8G x 8 | [DATA_NEEDED: capacity organization] |
| Ancho del bus de datos | 8 bit | — |
| Tipo de interfaz | Asynchronous NAND (multiplexed address/data/command) | — |
| Tensión de alimentación | [DATA_NEEDED: supply voltage] | [DATA_NEEDED: VCC range] |
| Page Size | [DATA_NEEDED: page size] | [DATA_NEEDED: main page size] |
| Block Size | [DATA_NEEDED: block size] | [DATA_NEEDED: erase block size] |
| Read Time (tR) | [DATA_NEEDED: read time] | [DATA_NEEDED: page read cycle time] |
| Program Time (tPROG) | [DATA_NEEDED: program time] | [DATA_NEEDED: page program time] |
| Program/Erase Cycles | [DATA_NEEDED: endurance] | — |
| Encapsulado | TSOP-48 (PDSO48) | [DATA_NEEDED: package type and dimensions] |
| Tipo de montaje | Surface Mount | Surface Mount |
| Temperatura de funcionamiento | -40C to +105C (TA) | [DATA_NEEDED: temperature range] |
| Ready/Busy Output | Yes (R/B#) | — |
| Die Technology | Samsung E-die (per datasheet family) | — |
| Full Ordering Code | K9HCG08U1M-PCB0 / K9HCG08U1M-PCB0T00 | — |
| Tipo de memoria | — | NAND Flash |
| Interfaz | — | Asynchronous x8-bit I/O |
| Erase Time (tBERS) | — | [DATA_NEEDED: block erase time] |
| Endurance | — | [DATA_NEEDED: program/erase cycles] |
| Data Retention | — | [DATA_NEEDED: retention specification] |
| Access Interface Signals | — | CLE, ALE, WE, RE, CE, R/B, WP |
| Bad Block Management | — | Host-managed (controller ECC and bad-block table required) |
| Estado RoHS | — | [DATA_NEEDED: RoHS compliance] |