K9HCG08U1M vs K9MDG08U5M Comparación
Comparación detallada lado a lado de K9HCG08U1M por Samsung Electronics y K9MDG08U5M por Samsung Electronics. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Samsung Electronics
K9HCG08U1M - 64Gb 8Gx8 MLC NAND Flash | Samsung | SSD Storage
K9HCG08U1M ✓ ActivoComparación de especificaciones
| Parámetro | K9HCG08U1M | K9MDG08U5M |
|---|---|---|
| Marca | Samsung Electronics | Samsung Electronics |
| Categoría | Memory ICs | Memory ICs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,00 | $35,50 |
| Memory Technology | MLC NAND Flash | — |
| Total Capacity | 64 Gbit | — |
| Organización de memoria | 8G x 8 | 16G x 8 bit |
| Ancho del bus de datos | 8 bit | — |
| Tipo de interfaz | Asynchronous NAND (multiplexed address/data/command) | — |
| Tensión de alimentación | [DATA_NEEDED: supply voltage] | — |
| Page Size | [DATA_NEEDED: page size] | [DATA_NEEDED: page size] |
| Block Size | [DATA_NEEDED: block size] | [DATA_NEEDED: block size] |
| Read Time (tR) | [DATA_NEEDED: read time] | — |
| Program Time (tPROG) | [DATA_NEEDED: program time] | [DATA_NEEDED: tPROG] |
| Program/Erase Cycles | [DATA_NEEDED: endurance] | — |
| Encapsulado | TSOP-48 (PDSO48) | 48-pin TSOP1 dual stacked, 12 mm x 20 mm |
| Tipo de montaje | Surface Mount | Surface Mount |
| Temperatura de funcionamiento | -40C to +105C (TA) | [DATA_NEEDED: operating temperature range] |
| Ready/Busy Output | Yes (R/B#) | — |
| Die Technology | Samsung E-die (per datasheet family) | — |
| Full Ordering Code | K9HCG08U1M-PCB0 / K9HCG08U1M-PCB0T00 | — |
| Tipo de memoria | — | MLC Large Block NAND Flash |
| Density | — | 16 Gbit (2 GB) |
| Cell Type | — | MLC (2 bits per cell) |
| Supply Voltage Min | — | 2.7 V |
| Supply Voltage Max | — | 3.6 V |
| Interfaz | — | Asynchronous x8 multiplexed address/data |
| Terminals | — | 48 |
| Circuits | — | 1 |
| Die Configuration | — | Dual stacked |
| Page Read Time (tR) | — | [DATA_NEEDED: tR] |
| Estado RoHS | — | unknown |