K9HQGY8S5M vs K9LCG08U1M Comparación
Comparación detallada lado a lado de K9HQGY8S5M por Samsung Electronics y K9LCG08U1M por Samsung Electronics. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Samsung Electronics
K9HQGY8S5M - 3D V-NAND Flash, FBGA-316 | Samsung | SSD Storage
K9HQGY8S5M ✓ Activo
Comparación de especificaciones
| Parámetro | K9HQGY8S5M | K9LCG08U1M |
|---|---|---|
| Marca | Samsung Electronics | Samsung Electronics |
| Categoría | Memory ICs | Flash |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,00 | $11,85 |
| Manufacturer | Samsung Electronics | — |
| Product Type | 3D V-NAND Flash Memory (stacked, client NAND) | — |
| Package Type | 316-ball Fine Pitch BGA (FBGA-316) | — |
| Die Configuration | 4 x K9ADGD8S0A V-NAND dies (per TechInsights package analysis) | — |
| NAND Technology | 32-layer pMLC 3D V-NAND (per Samsung 850 Pro 256 GB analysis) | — |
| Memory Class | Non-volatile NAND flash | — |
| Interfaz | NAND (ONFI/Toggle-style asynchronous interface) - exact timing mode [DATA_NEEDED: interface timing mode] | Asynchronous multiplexed NAND I/O |
| Density | [DATA_NEEDED: total bit density] | 64 Gbit (8 GB) |
| Tensión de alimentación | [DATA_NEEDED: VCC range] | [DATA_NEEDED: supply voltage] |
| Page Size | [DATA_NEEDED: page size] | [DATA_NEEDED: page size] |
| Block Size | [DATA_NEEDED: block size] | [DATA_NEEDED: block size] |
| Program/Erase Cycles | [DATA_NEEDED: P/E endurance rating] | — |
| Tipo de montaje | Surface Mount (BGA) | Surface Mount |
| Temperatura de funcionamiento | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Estado RoHS | [DATA_NEEDED: RoHS status] | unknown |
| Nivel MSL | [DATA_NEEDED: moisture sensitivity level] | — |
| Original Application | Samsung SSD 850 Pro solid-state drive | — |
| Tipo de memoria | — | NAND Flash, MLC |
| Organización de memoria | — | x8 I/O |
| Cell Type | — | MLC (2 bits per cell) |
| Encapsulado | — | BGA |
| Page Read Time | — | [DATA_NEEDED: page read time] |
| Page Program Time | — | [DATA_NEEDED: page program time] |
| Block Erase Time | — | [DATA_NEEDED: block erase time] |
| Endurance | — | [DATA_NEEDED: program/erase cycles] |
| Ordering Codes | — | K9LCG08U1M-LCB0 / K9LCG08U1M-LCB00 / K9LCG08U1M-LCB |