K9HQGY8S5M vs K9LCG08U1M Vergleich

Detaillierter Direktvergleich von K9HQGY8S5M von Samsung Electronics und K9LCG08U1M von Samsung Electronics. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Samsung Electronics
K9HQGY8S5M K9HQGY8S5M - 3D V-NAND Flash, FBGA-316 | Samsung | SSD Storage

K9HQGY8S5M - 3D V-NAND Flash, FBGA-316 | Samsung | SSD Storage

K9HQGY8S5M ✓ Aktiv
Samsung Electronics
K9LCG08U1M K9LCG08U1M - 64Gbit MLC NAND Flash | Samsung | SSD Storage

K9LCG08U1M - 64Gbit MLC NAND Flash | Samsung | SSD Storage

K9LCG08U1M ✓ Aktiv

Spezifikationsvergleich

Parameter K9HQGY8S5M K9LCG08U1M
Marke Samsung Electronics Samsung Electronics
Kategorie Memory ICs Flash
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,00 $11,85
Manufacturer Samsung Electronics —
Product Type 3D V-NAND Flash Memory (stacked, client NAND) —
Package Type 316-ball Fine Pitch BGA (FBGA-316) —
Die Configuration 4 x K9ADGD8S0A V-NAND dies (per TechInsights package analysis) —
NAND Technology 32-layer pMLC 3D V-NAND (per Samsung 850 Pro 256 GB analysis) —
Memory Class Non-volatile NAND flash —
Schnittstelle NAND (ONFI/Toggle-style asynchronous interface) - exact timing mode [DATA_NEEDED: interface timing mode] Asynchronous multiplexed NAND I/O
Density [DATA_NEEDED: total bit density] 64 Gbit (8 GB)
Versorgungsspannung [DATA_NEEDED: VCC range] [DATA_NEEDED: supply voltage]
Page Size [DATA_NEEDED: page size] [DATA_NEEDED: page size]
Block Size [DATA_NEEDED: block size] [DATA_NEEDED: block size]
Program/Erase Cycles [DATA_NEEDED: P/E endurance rating] —
Montageart Surface Mount (BGA) Surface Mount
Betriebstemperatur [DATA_NEEDED: operating temperature range] [DATA_NEEDED: operating temperature range]
RoHS-Status [DATA_NEEDED: RoHS status] unknown
MSL-Level [DATA_NEEDED: moisture sensitivity level] —
Original Application Samsung SSD 850 Pro solid-state drive —
Speichertyp — NAND Flash, MLC
Speicherorganisation — x8 I/O
Cell Type — MLC (2 bits per cell)
Gehäuse — BGA
Page Read Time — [DATA_NEEDED: page read time]
Page Program Time — [DATA_NEEDED: page program time]
Block Erase Time — [DATA_NEEDED: block erase time]
Endurance — [DATA_NEEDED: program/erase cycles]
Ordering Codes — K9LCG08U1M-LCB0 / K9LCG08U1M-LCB00 / K9LCG08U1M-LCB

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