K9JUGY8J5C-BCK0 vs K9JUGY8J5C-CCK0 Comparación
Comparación detallada lado a lado de K9JUGY8J5C-BCK0 por Samsung Electronics y K9JUGY8J5C-CCK0 por Samsung Electronics. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | K9JUGY8J5C-BCK0 | K9JUGY8J5C-CCK0 |
|---|---|---|
| Marca | Samsung Electronics | Samsung Electronics |
| Categoría | Flash | Memory ICs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,00 | $7,60 |
| Tipo de memoria | NAND Flash (V-NAND TLC) | NAND Flash - V-NAND (TLC) |
| Density | 1 Tb | 1 Tb (128 GB) |
| Cell Type | Triple-Level Cell (TLC) | TLC (Triple-Level Cell) |
| Technology | Samsung V-NAND (3D) | — |
| Organización de memoria | [DATA_NEEDED: page/block organization] | [DATA_NEEDED: page/block organization] |
| Page Size | [DATA_NEEDED: page size] | — |
| Block Size | [DATA_NEEDED: block size] | — |
| Interfaz | [DATA_NEEDED: async/DDR or Toggle DDR interface and mode] | [DATA_NEEDED: toggle/ONFI mode] |
| Supply Voltage (VCC) | [DATA_NEEDED: VCC range] | [DATA_NEEDED: VCC range] |
| Supply Voltage (VCCQ) | [DATA_NEEDED: VCCQ range] | [DATA_NEEDED: VCCQ range] |
| Program Time (typ) | [DATA_NEEDED: tPROG] | — |
| Read Time (typ) | [DATA_NEEDED: tR] | — |
| Encapsulado | [DATA_NEEDED: FBGA ball count / package code] | [DATA_NEEDED: BGA package code and dimensions] |
| Temperatura de funcionamiento | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: temperature range] |
| Endurance (P/E cycles) | [DATA_NEEDED: program/erase endurance] | [DATA_NEEDED: rated P/E cycles] |
| Data Retention | [DATA_NEEDED: retention specification] | — |
| Estado RoHS | Compliant | [DATA_NEEDED: RoHS status] |
| Tipo de montaje | Surface Mount | Surface Mount |
| Manufacturer | — | Samsung Electronics |
| Technology Generation | — | V6 (6th-gen V-NAND, 128-layer) |
| Read Latency | — | [DATA_NEEDED: tR] |
| Program Time | — | [DATA_NEEDED: tPROG] |
| Nivel MSL | — | [DATA_NEEDED: moisture sensitivity level] |