K9JUGY8J5C-BCK0 vs K9JUGY8J5C-CCK0 Vergleich

Detaillierter Direktvergleich von K9JUGY8J5C-BCK0 von Samsung Electronics und K9JUGY8J5C-CCK0 von Samsung Electronics. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Samsung Electronics
K9JUGY8J5C-BCK0 K9JUGY8J5C-BCK0 - 1Tb TLC V-NAND Flash | Samsung

K9JUGY8J5C-BCK0 - 1Tb TLC V-NAND Flash | Samsung

K9JUGY8J5C-BCK0 ✓ Aktiv
Samsung Electronics
K9JUGY8J5C-CCK0 K9JUGY8J5C-CCK0 - 1Tb TLC V-NAND Flash | Samsung

K9JUGY8J5C-CCK0 - 1Tb TLC V-NAND Flash | Samsung

K9JUGY8J5C-CCK0 ✓ Aktiv

Spezifikationsvergleich

Parameter K9JUGY8J5C-BCK0 K9JUGY8J5C-CCK0
Marke Samsung Electronics Samsung Electronics
Kategorie Flash Memory ICs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,00 $7,60
Speichertyp NAND Flash (V-NAND TLC) NAND Flash - V-NAND (TLC)
Density 1 Tb 1 Tb (128 GB)
Cell Type Triple-Level Cell (TLC) TLC (Triple-Level Cell)
Technology Samsung V-NAND (3D) —
Speicherorganisation [DATA_NEEDED: page/block organization] [DATA_NEEDED: page/block organization]
Page Size [DATA_NEEDED: page size] —
Block Size [DATA_NEEDED: block size] —
Schnittstelle [DATA_NEEDED: async/DDR or Toggle DDR interface and mode] [DATA_NEEDED: toggle/ONFI mode]
Supply Voltage (VCC) [DATA_NEEDED: VCC range] [DATA_NEEDED: VCC range]
Supply Voltage (VCCQ) [DATA_NEEDED: VCCQ range] [DATA_NEEDED: VCCQ range]
Program Time (typ) [DATA_NEEDED: tPROG] —
Read Time (typ) [DATA_NEEDED: tR] —
Gehäuse [DATA_NEEDED: FBGA ball count / package code] [DATA_NEEDED: BGA package code and dimensions]
Betriebstemperatur [DATA_NEEDED: operating temperature range] [DATA_NEEDED: temperature range]
Endurance (P/E cycles) [DATA_NEEDED: program/erase endurance] [DATA_NEEDED: rated P/E cycles]
Data Retention [DATA_NEEDED: retention specification] —
RoHS-Status Compliant [DATA_NEEDED: RoHS status]
Montageart Surface Mount Surface Mount
Manufacturer — Samsung Electronics
Technology Generation — V6 (6th-gen V-NAND, 128-layer)
Read Latency — [DATA_NEEDED: tR]
Program Time — [DATA_NEEDED: tPROG]
MSL-Level — [DATA_NEEDED: moisture sensitivity level]

Datenblätter & Ressourcen

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