K9NUGY8R6B-CCQ0 vs K9MUGY8R4A-CCQ0 Comparación
Comparación detallada lado a lado de K9NUGY8R6B-CCQ0 por Samsung Electronics y K9MUGY8R4A-CCQ0 por Samsung Electronics. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Samsung Electronics
K9NUGY8R6B-CCQ0 - 1Tb TLC V-NAND Flash | Samsung | SSD Storage
K9NUGY8R6B-CCQ0 ✓ ActivoSamsung Electronics
K9MUGY8R4A-CCQ0 - Samsung V-NAND Flash Memory | Samsung Electronics
K9MUGY8R4A-CCQ0 ✓ ActivoComparación de especificaciones
| Parámetro | K9NUGY8R6B-CCQ0 | K9MUGY8R4A-CCQ0 |
|---|---|---|
| Marca | Samsung Electronics | Samsung Electronics |
| Categoría | Memory ICs | Memory ICs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,00 | $0,00 |
| Tipo de memoria | NAND Flash (V-NAND, 3D TLC) | — |
| Density | 1 Tb | [DATA_NEEDED: total density] |
| Cell Type | Triple-Level Cell (TLC) | [DATA_NEEDED: cell type (MLC/TLC)] |
| Encapsulado | 176-ball FBGA (176L) | — |
| Tipo de montaje | Surface Mount (BGA) | Surface Mount |
| Tensión de alimentación | [DATA_NEEDED: VCC range] | — |
| Page Size | [DATA_NEEDED: page size] | — |
| Block Size | [DATA_NEEDED: block size] | — |
| Program/Erase Cycles | [DATA_NEEDED: P/E endurance] | — |
| Data Retention | [DATA_NEEDED: retention] | — |
| Read Latency | [DATA_NEEDED: tR] | — |
| Interfaz | Asynchronous / Toggle-mode NAND (per Samsung V-NAND protocol) | — |
| ECC Requirement | External controller LDPC ECC required | — |
| Temperatura de funcionamiento | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Estado RoHS | [DATA_NEEDED: RoHS compliance] | [DATA_NEEDED: RoHS status] |
| Application Class | Consumer / Client / Enterprise SSD raw NAND | — |
| Manufacturer | — | Samsung Electronics |
| Product Family | — | K9 V-NAND (NAND Flash) |
| Memory Technology | — | V-NAND (vertical NAND flash) |
| Organización de memoria | — | [DATA_NEEDED: page/block organization] |
| Tipo de interfaz | — | [DATA_NEEDED: interface (Toggle DDR/ONFI)] |
| Maximum I/O Speed | — | [DATA_NEEDED: data transfer rate] |
| Supply Voltage - VCC | — | [DATA_NEEDED: VCC range] |
| Supply Voltage - VCCQ | — | [DATA_NEEDED: VCCQ range] |
| Page Program Time (typ) | — | [DATA_NEEDED: tPROG] |
| Block Erase Time (typ) | — | [DATA_NEEDED: tBERS] |
| Endurance (P/E cycles) | — | [DATA_NEEDED: endurance] |
| Package Type | — | [DATA_NEEDED: package type and pin count] |