K9NUGY8R6B-CCQ0 vs K9MUGY8R4A-CCQ0 Comparaison
Comparaison détaillée côte à côte de K9NUGY8R6B-CCQ0 par Samsung Electronics et K9MUGY8R4A-CCQ0 par Samsung Electronics. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Samsung Electronics
K9NUGY8R6B-CCQ0 - 1Tb TLC V-NAND Flash | Samsung | SSD Storage
K9NUGY8R6B-CCQ0 ✓ ActifSamsung Electronics
K9MUGY8R4A-CCQ0 - Samsung V-NAND Flash Memory | Samsung Electronics
K9MUGY8R4A-CCQ0 ✓ ActifComparaison des spécifications
| Paramètre | K9NUGY8R6B-CCQ0 | K9MUGY8R4A-CCQ0 |
|---|---|---|
| Marque | Samsung Electronics | Samsung Electronics |
| Catégorie | Memory ICs | Memory ICs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $0,00 | $0,00 |
| Type de mémoire | NAND Flash (V-NAND, 3D TLC) | — |
| Density | 1 Tb | [DATA_NEEDED: total density] |
| Cell Type | Triple-Level Cell (TLC) | [DATA_NEEDED: cell type (MLC/TLC)] |
| Boîtier | 176-ball FBGA (176L) | — |
| Type de montage | Surface Mount (BGA) | Surface Mount |
| Tension d'alimentation | [DATA_NEEDED: VCC range] | — |
| Page Size | [DATA_NEEDED: page size] | — |
| Block Size | [DATA_NEEDED: block size] | — |
| Program/Erase Cycles | [DATA_NEEDED: P/E endurance] | — |
| Data Retention | [DATA_NEEDED: retention] | — |
| Read Latency | [DATA_NEEDED: tR] | — |
| Interface | Asynchronous / Toggle-mode NAND (per Samsung V-NAND protocol) | — |
| ECC Requirement | External controller LDPC ECC required | — |
| Température de fonctionnement | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Statut RoHS | [DATA_NEEDED: RoHS compliance] | [DATA_NEEDED: RoHS status] |
| Application Class | Consumer / Client / Enterprise SSD raw NAND | — |
| Manufacturer | — | Samsung Electronics |
| Product Family | — | K9 V-NAND (NAND Flash) |
| Memory Technology | — | V-NAND (vertical NAND flash) |
| Organisation de la mémoire | — | [DATA_NEEDED: page/block organization] |
| Type d'interface | — | [DATA_NEEDED: interface (Toggle DDR/ONFI)] |
| Maximum I/O Speed | — | [DATA_NEEDED: data transfer rate] |
| Supply Voltage - VCC | — | [DATA_NEEDED: VCC range] |
| Supply Voltage - VCCQ | — | [DATA_NEEDED: VCCQ range] |
| Page Program Time (typ) | — | [DATA_NEEDED: tPROG] |
| Block Erase Time (typ) | — | [DATA_NEEDED: tBERS] |
| Endurance (P/E cycles) | — | [DATA_NEEDED: endurance] |
| Package Type | — | [DATA_NEEDED: package type and pin count] |