K9T1G08U0M-PIB0 vs MT29F1G08ABAEAWP-IT:E Comparación
Comparación detallada lado a lado de K9T1G08U0M-PIB0 por Samsung Electronics y MT29F1G08ABAEAWP-IT:E por Micron Technology. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Micron Technology
MT29F1G08ABAEAWP-IT:E - 1Gbit SLC NAND Flash | Micron
MT29F1G08ABAEAWP-IT:E ✓ ActivoComparación de especificaciones
| Parámetro | K9T1G08U0M-PIB0 | MT29F1G08ABAEAWP-IT:E |
|---|---|---|
| Marca | Samsung Electronics | Micron Technology |
| Categoría | Memory ICs | Memory ICs |
| Estado del ciclo de vida | NRND | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $1,85 | $1,60 |
| Tipo de memoria | Non-volatile NAND Flash (SLC) | — |
| Density | 1 Gbit (128 MB) | — |
| Organización de memoria | 128M x 8 bit | 128M x 8 |
| Cell Technology | SLC (Single-Level Cell) | — |
| Interfaz | Asynchronous NAND, 8-bit I/O bus | Parallel |
| Page Size | 2 Kbytes + 64 bytes spare area | 2048 bytes + 64 bytes spare |
| Block Size | 128 Kbytes (64 pages per block) | 128 KB |
| VCC Supply Voltage | 2.7 V to 3.6 V | — |
| Temperatura de funcionamiento | [DATA_NEEDED: industrial vs commercial grade] | -40C to +85C |
| Encapsulado | 48-pin TSOP Type I (WSOP1) | TSOP-48 |
| Pb-Free (Lead-Free) | Yes (PIB0 suffix indicates Pb-free) | — |
| RoHS Compliance | Compliant (Pb-free variant) | — |
| Endurance (P/E Cycles) | [DATA_NEEDED: typical P/E endurance spec] | — |
| Data Retention | [DATA_NEEDED: data retention spec] | 10 years |
| Programming Time per Page | [DATA_NEEDED: typical tPROG] | — |
| Block Erase Time | [DATA_NEEDED: typical tBERS] | — |
| Tipo de montaje | Surface Mount (TSOP) | Surface Mount |
| Command Set | Standard NAND (ONFI-compatible legacy commands) | — |
| Tamaño de memoria | — | 1 Gbit (128 MB) |
| Tensión de alimentación | — | 3.3 V |
| Access Time | — | 25 ns |
| Program Time | — | 200 us (typical) |
| Erase Time | — | 2 ms (typical) |
| Endurance | — | 100K program/erase cycles |
| Estado RoHS | — | Compliant |