K9T1G08U0M-PIB0 vs MT29F1G08ABAEAWP-IT:E 比較
詳細な並列比較: K9T1G08U0M-PIB0 メーカー: Samsung Electronics および MT29F1G08ABAEAWP-IT:E メーカー: Micron Technology。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | K9T1G08U0M-PIB0 | MT29F1G08ABAEAWP-IT:E |
|---|---|---|
| ブランド | Samsung Electronics | Micron Technology |
| カテゴリ | Memory ICs | Memory ICs |
| ライフサイクル状態 | NRND | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $1.85 | $1.60 |
| メモリタイプ | Non-volatile NAND Flash (SLC) | — |
| Density | 1 Gbit (128 MB) | — |
| メモリ構成 | 128M x 8 bit | 128M x 8 |
| Cell Technology | SLC (Single-Level Cell) | — |
| インターフェース | Asynchronous NAND, 8-bit I/O bus | Parallel |
| Page Size | 2 Kbytes + 64 bytes spare area | 2048 bytes + 64 bytes spare |
| Block Size | 128 Kbytes (64 pages per block) | 128 KB |
| VCC Supply Voltage | 2.7 V to 3.6 V | — |
| 動作温度 | [DATA_NEEDED: industrial vs commercial grade] | -40C to +85C |
| パッケージ | 48-pin TSOP Type I (WSOP1) | TSOP-48 |
| Pb-Free (Lead-Free) | Yes (PIB0 suffix indicates Pb-free) | — |
| RoHS Compliance | Compliant (Pb-free variant) | — |
| Endurance (P/E Cycles) | [DATA_NEEDED: typical P/E endurance spec] | — |
| Data Retention | [DATA_NEEDED: data retention spec] | 10 years |
| Programming Time per Page | [DATA_NEEDED: typical tPROG] | — |
| Block Erase Time | [DATA_NEEDED: typical tBERS] | — |
| 実装タイプ | Surface Mount (TSOP) | Surface Mount |
| Command Set | Standard NAND (ONFI-compatible legacy commands) | — |
| メモリサイズ | — | 1 Gbit (128 MB) |
| 電源電圧 | — | 3.3 V |
| Access Time | — | 25 ns |
| Program Time | — | 200 us (typical) |
| Erase Time | — | 2 ms (typical) |
| Endurance | — | 100K program/erase cycles |
| RoHS ステータス | — | Compliant |