M29F400FT55N3F2 vs M29F400FB55N3F2 Comparación
Comparación detallada lado a lado de M29F400FT55N3F2 por Micron Technology y M29F400FB55N3F2 por Micron Technology. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Micron Technology
M29F400FT55N3F2 - 4Mbit 5V Parallel NOR Flash 55ns | Micron
M29F400FT55N3F2 ✓ Activo
Comparación de especificaciones
| Parámetro | M29F400FT55N3F2 | M29F400FB55N3F2 |
|---|---|---|
| Marca | Micron Technology | Micron Technology |
| Categoría | EEPROM | Memory ICs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $1,51 | $2,95 |
| Tipo de memoria | NOR Flash (SLC) | NOR Flash |
| Tamaño de memoria | 4 Mbit | — |
| Organización de memoria | 256K x 16 | 256K x 16 / 512K x 8 |
| Interfaz | Parallel | Parallel |
| Access Time | 55 ns | 55 ns |
| Tensión de alimentación | 5 V | 5 V |
| Block Architecture | Top boot block | — |
| Encapsulado | 44-SO (SOP-44) | 48-TSOP I |
| Tipo de montaje | Surface Mount | Surface Mount |
| Temperature Grade | Auto Grade 3, up to +125C (per Micron ordering code) | — |
| Compliance Suffix | F2 (RoHS-compliant, lead-free plating) | — |
| Programming Voltage | Single supply (no 12 V VPP required) | — |
| Technology | Floating-gate NOR cell, charge-pump program/erase | — |
| Max Standby Current | [DATA_NEEDED: standby current] | — |
| Program/Erase Endurance | [DATA_NEEDED: endurance cycles] | — |
| Temperatura de funcionamiento | [DATA_NEEDED: min operating temperature] | -40C to +125C |
| Density | — | 4 Mbit (4194 kbit) |
| Boot Block | — | Bottom boot block |
| Program/Erase Controller | — | Embedded byte/word program algorithms |
| Standard Package Quantity | — | 1500 units (Tape & Reel) |
| Active/Standby Current | — | [DATA_NEEDED: active and standby current] |
| Erase/Program Endurance | — | [DATA_NEEDED: endurance cycles] |
| Data Retention | — | [DATA_NEEDED: retention years] |
| VIO Range | — | [DATA_NEEDED: I/O voltage range] |
| Estado RoHS | — | Compliant (lead-free build per F2 suffix) |