M29W128GL70ZS3F vs M29W128GL70N3F Comparación
Comparación detallada lado a lado de M29W128GL70ZS3F por Micron Technology y M29W128GL70N3F por Micron Technology. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | M29W128GL70ZS3F | M29W128GL70N3F |
|---|---|---|
| Marca | Micron Technology | Micron Technology |
| Categoría | Memory ICs | Memory ICs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $5,90 | $2,48 |
| Tipo de memoria | NOR Flash (Parallel) | NOR Flash |
| Density | 128 Mbit | 128 Mbit |
| Organización de memoria | 16M x 8 / 8M x 16 | 8M x16 / 16M x8 |
| Access Time | 70 ns | 70 ns |
| Tensión de alimentación | 3 V / 3.3 V | [DATA_NEEDED: supply voltage range] |
| Interfaz | Parallel | Parallel |
| Block Architecture | 64/64 (two 64 Mbit partitions) | — |
| Encapsulado | 64-FBGA (11 x 13 mm) | 56-TSOP |
| Tipo de montaje | Surface Mount | Surface Mount |
| Temperatura de funcionamiento | -40C to +125C | [DATA_NEEDED: operating temperature range] |
| Qualification | Automotive, AEC-Q100 | — |
| Packaging | Tape & Reel (TR) | — |
| Estado RoHS | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| Program/Erase Endurance | [DATA_NEEDED: endurance cycles] | — |
| Supply Voltage Range | [DATA_NEEDED: VCC min/max] | — |
| Nivel MSL | [DATA_NEEDED: moisture sensitivity level] | — |
| Standby Current | [DATA_NEEDED: standby current] | — |
| Memory Format | — | FLASH - NOR |
| Block Organization Variant | — | GL (boot-block) |
| Speed Grade Code | — | -70 |
| Package Finish Code | — | N3F (lead-free TSOP) |
| Programming Interface | — | Command-set parallel bus, embedded state machine |
| Moisture Sensitivity Level | — | [DATA_NEEDED: MSL level] |