M29W640GB70N3E vs M29W640GB70N3F Comparación
Comparación detallada lado a lado de M29W640GB70N3E por Micron Technology y M29W640GB70N3F por Micron Technology. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | M29W640GB70N3E | M29W640GB70N3F |
|---|---|---|
| Marca | Micron Technology | Micron Technology |
| Categoría | Memory ICs | Memory ICs |
| Estado del ciclo de vida | Activo | Obsolete |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $7,05 | $2,66 |
| Tipo de memoria | NOR Flash | NOR Flash, Parallel |
| Density | 64 Mbit (8 MByte) | 64 Mb (8 MB) |
| Interfaz | Parallel, asynchronous | — |
| Access Time | 70 ns | 70 ns |
| Tensión de alimentación | 2.7 V to 3.6 V | 2.7 V to 3.6 V |
| Organización de memoria | 4M x16 / 8M x8 | x8 / x16 |
| Boot Block | Bottom boot block (GB) | — |
| Temperatura de funcionamiento | -40C to +125C | -40C to +125C |
| Encapsulado | 48-TSOP I | 48-TSOP I |
| Tipo de montaje | Surface Mount | Surface Mount |
| Programming | Word/Byte program, block erase | — |
| Command Set | M29W family standard command set | — |
| Chipset Validation | N/A | — |
| FBGA Code | N/A | — |
| Data Retention | [DATA_NEEDED: data retention] | — |
| Endurance | [DATA_NEEDED: program/erase endurance cycles] | [DATA_NEEDED: program/erase endurance cycles] |
| Estado RoHS | [DATA_NEEDED: RoHS status] | Compliant (per JLCPCB listing) |
| Qualification | — | Automotive AEC-Q100 |
| Program/Erase Interface | — | Parallel command set with status polling |
| Block Architecture | — | Uniform block (GB variant) |
| Part Status | — | Obsolete |
| Standby Current | — | [DATA_NEEDED: standby current] |
| Read Current | — | [DATA_NEEDED: active read current] |