MMG3004NT1 vs MMG3004NT1528 Comparación
Comparación detallada lado a lado de MMG3004NT1 por NXP Semiconductors y MMG3004NT1528 por NXP Semiconductors. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
NXP Semiconductors
MMG3004NT1 - 400-2200 MHz, 27 dBm InGaP HBT GPA | NXP Semiconductors
MMG3004NT1 ✓ ActivoNXP Semiconductors
MMG3004NT1528 - 400-2200 MHz 17dB 27dBm InGaP HBT GPA | NXP
MMG3004NT1528 ✓ ActivoComparación de especificaciones
| Parámetro | MMG3004NT1 | MMG3004NT1528 |
|---|---|---|
| Marca | NXP Semiconductors | NXP Semiconductors |
| Categoría | RF Amplifiers | RF Amplifiers |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $2,45 | $11,60 |
| Technology | InGaP HBT (Heterojunction Bipolar Transistor) | — |
| Función | General Purpose Amplifier (GPA), Class A, small-signal, broadband | — |
| Frequency Range | 400 MHz to 2200 MHz | 400 MHz to 2200 MHz |
| Small-Signal Gain | 17 dB (typical) | 17 dB |
| Output Power (P1dB) | +27 dBm (typical) | — |
| Output Third-Order Intercept (OIP3) | [DATA_NEEDED: OIP3] | — |
| Tensión de alimentación de funcionamiento | [DATA_NEEDED: VCC range] | — |
| Operating Supply Current | [DATA_NEEDED: ICC] | — |
| Input/Output Matching | Internally prematched to 50 ohm | — |
| Encapsulado | 16-PQFN (5x5 mm) | 16-pin PQFN (5x5 mm) |
| Package Type | PQFN-16 with exposed thermal paddle | — |
| Tipo de montaje | Surface Mount | Surface Mount |
| Rango de temperatura de funcionamiento | [DATA_NEEDED: operating temperature range] | — |
| Storage Temperature Range | [DATA_NEEDED: storage temperature range] | — |
| Nivel MSL | [DATA_NEEDED: MSL rating] | — |
| Estado RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Manufacturer | — | NXP Semiconductors (formerly Freescale) |
| Part Description | — | InGaP HBT Broadband General-Purpose Amplifier |
| Process Technology | — | Indium Gallium Phosphide HBT (InGaP HBT) |
| Output P1dB | — | +27 dBm |
| Tensión de alimentación | — | [DATA_NEEDED: Vcc typical] |
| Corriente de alimentación | — | [DATA_NEEDED: Icc typical] |
| Noise Figure | — | [DATA_NEEDED: NF dB] |
| OIP3 | — | [DATA_NEEDED: OIP3 dBm] |
| Input Return Loss | — | [DATA_NEEDED: S11 dB] |
| Output Return Loss | — | [DATA_NEEDED: S22 dB] |
| Temperatura de funcionamiento | — | -40C to +85C |
| Packaging | — | Tape and Reel (1500-unit reel, 528 suffix) |