MMG3004NT1 vs MMG3004NT1528 비교

다음의 상세 나란히 비교: MMG3004NT1 제조: NXP Semiconductors 및 MMG3004NT1528 제조: NXP Semiconductors. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

NXP Semiconductors
MMG3004NT1528 MMG3004NT1528 - 400-2200 MHz 17dB 27dBm InGaP HBT GPA | NXP

MMG3004NT1528 - 400-2200 MHz 17dB 27dBm InGaP HBT GPA | NXP

MMG3004NT1528 ✓ 활성

사양 비교

파라미터 MMG3004NT1 MMG3004NT1528
브랜드 NXP Semiconductors NXP Semiconductors
카테고리 RF Amplifiers RF Amplifiers
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $2.45 $11.60
Technology InGaP HBT (Heterojunction Bipolar Transistor) —
기능 General Purpose Amplifier (GPA), Class A, small-signal, broadband —
Frequency Range 400 MHz to 2200 MHz 400 MHz to 2200 MHz
Small-Signal Gain 17 dB (typical) 17 dB
Output Power (P1dB) +27 dBm (typical) —
Output Third-Order Intercept (OIP3) [DATA_NEEDED: OIP3] —
동작 공급 전압 [DATA_NEEDED: VCC range] —
Operating Supply Current [DATA_NEEDED: ICC] —
Input/Output Matching Internally prematched to 50 ohm —
패키지 16-PQFN (5x5 mm) 16-pin PQFN (5x5 mm)
Package Type PQFN-16 with exposed thermal paddle —
실장 유형 Surface Mount Surface Mount
동작 온도 범위 [DATA_NEEDED: operating temperature range] —
Storage Temperature Range [DATA_NEEDED: storage temperature range] —
MSL 레벨 [DATA_NEEDED: MSL rating] —
RoHS 상태 Compliant Compliant
Lead-Free Yes —
Manufacturer — NXP Semiconductors (formerly Freescale)
Part Description — InGaP HBT Broadband General-Purpose Amplifier
Process Technology — Indium Gallium Phosphide HBT (InGaP HBT)
Output P1dB — +27 dBm
공급 전압 — [DATA_NEEDED: Vcc typical]
공급 전류 — [DATA_NEEDED: Icc typical]
Noise Figure — [DATA_NEEDED: NF dB]
OIP3 — [DATA_NEEDED: OIP3 dBm]
Input Return Loss — [DATA_NEEDED: S11 dB]
Output Return Loss — [DATA_NEEDED: S22 dB]
동작 온도 — -40C to +85C
Packaging — Tape and Reel (1500-unit reel, 528 suffix)

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