MPX2010DP vs MPX2010D Comparación
Comparación detallada lado a lado de MPX2010DP por NXP Semiconductors y MPX2010D por STMicroelectronics. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
STMicroelectronics
MPX2010D - 10kPa Differential Pressure Sensor | STMicroelectronics
MPX2010D ✓ ActivoComparación de especificaciones
| Parámetro | MPX2010DP | MPX2010D |
|---|---|---|
| Marca | NXP Semiconductors | STMicroelectronics |
| Categoría | Pressure Sensors | Pressure Sensors |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $8,50 | $9,10 |
| Tipo de sensor | Differential Pressure Sensor | — |
| Pressure Range | 0 to 10 kPa (0 to 1.45 PSI) | — |
| Technology | Piezoresistive (silicon strain gauge bridge) | — |
| Tipo de salida | Analog voltage, Wheatstone bridge (mV level) | Analog Wheatstone Bridge (mV) |
| Typical Full-Scale Span | 25 mV at 10 V excitation | — |
| Zero Pressure Offset | 0 mV nominally (±1.0 mV max) | — |
| Tensión de alimentación | 10 V DC typical (max 16 V) | — |
| Linearity | ±0.05% (typ) | 0.1% of full-scale (typical) |
| Temperature Compensation | 0 °C to +85 °C (on-chip) | — |
| Temperatura de funcionamiento | -40 °C to +125 °C | — |
| Response Time | 1.0 ms (typical) | — |
| Maximum Overpressure | 75 kPa | [DATA_NEEDED: maximum overpressure rating] |
| Burst Pressure | 200 kPa | — |
| Port Configuration | Dual ports (differential), 0.19 inch / 4.93 mm tubes | — |
| Package / Mounting | 4-SIP Module (through-hole with axial tubes) | — |
| Media Compatibility | Dry air or non-corrosive gas | — |
| Estado RoHS | Compliant | [DATA_NEEDED: RoHS status from ST datasheet] |
| Pressure Type | — | Differential (Port 1 vs Port 2) |
| Operating Pressure Range | — | 0 kPa to 10 kPa (0 PSI to 1.45 PSI) |
| Output Voltage Span | — | 0 mV to 25 mV at 10V excitation |
| Sensitivity | — | 2.5 mV/kPa (nominal, at 10V excitation) |
| Excitation Voltage | — | 10 V (typical), 16 V (maximum) |
| Rango de temperatura de funcionamiento | — | 0 C to +85 C |
| Storage Temperature Range | — | [DATA_NEEDED: storage temperature range] |
| Encapsulado / Carcasa | — | 4-SIP Module (Case 344-15) |
| Tipo de montaje | — | Through-Hole |
| Número de pines | — | 4 |
| On-Chip Temperature Compensation | — | Yes (laser trimmed) |
| Bridge Configuration | — | 4-arm piezoresistive Wheatstone |
| Sensor Family | — | MPX2010 / MPXV2010G / MPXM2010 |
| Diaphragm Type | — | Single monolithic silicon |