MPX2010DP vs MPX2010D Comparaison
Comparaison détaillée côte à côte de MPX2010DP par NXP Semiconductors et MPX2010D par STMicroelectronics. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
STMicroelectronics
MPX2010D - 10kPa Differential Pressure Sensor | STMicroelectronics
MPX2010D ✓ ActifComparaison des spécifications
| Paramètre | MPX2010DP | MPX2010D |
|---|---|---|
| Marque | NXP Semiconductors | STMicroelectronics |
| Catégorie | Pressure Sensors | Pressure Sensors |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $8,50 | $9,10 |
| Type de capteur | Differential Pressure Sensor | — |
| Pressure Range | 0 to 10 kPa (0 to 1.45 PSI) | — |
| Technology | Piezoresistive (silicon strain gauge bridge) | — |
| Type de sortie | Analog voltage, Wheatstone bridge (mV level) | Analog Wheatstone Bridge (mV) |
| Typical Full-Scale Span | 25 mV at 10 V excitation | — |
| Zero Pressure Offset | 0 mV nominally (±1.0 mV max) | — |
| Tension d'alimentation | 10 V DC typical (max 16 V) | — |
| Linearity | ±0.05% (typ) | 0.1% of full-scale (typical) |
| Temperature Compensation | 0 °C to +85 °C (on-chip) | — |
| Température de fonctionnement | -40 °C to +125 °C | — |
| Response Time | 1.0 ms (typical) | — |
| Maximum Overpressure | 75 kPa | [DATA_NEEDED: maximum overpressure rating] |
| Burst Pressure | 200 kPa | — |
| Port Configuration | Dual ports (differential), 0.19 inch / 4.93 mm tubes | — |
| Package / Mounting | 4-SIP Module (through-hole with axial tubes) | — |
| Media Compatibility | Dry air or non-corrosive gas | — |
| Statut RoHS | Compliant | [DATA_NEEDED: RoHS status from ST datasheet] |
| Pressure Type | — | Differential (Port 1 vs Port 2) |
| Operating Pressure Range | — | 0 kPa to 10 kPa (0 PSI to 1.45 PSI) |
| Output Voltage Span | — | 0 mV to 25 mV at 10V excitation |
| Sensitivity | — | 2.5 mV/kPa (nominal, at 10V excitation) |
| Excitation Voltage | — | 10 V (typical), 16 V (maximum) |
| Plage de température de fonctionnement | — | 0 C to +85 C |
| Storage Temperature Range | — | [DATA_NEEDED: storage temperature range] |
| Boîtier / Format | — | 4-SIP Module (Case 344-15) |
| Type de montage | — | Through-Hole |
| Nombre de broches | — | 4 |
| On-Chip Temperature Compensation | — | Yes (laser trimmed) |
| Bridge Configuration | — | 4-arm piezoresistive Wheatstone |
| Sensor Family | — | MPX2010 / MPXV2010G / MPXM2010 |
| Diaphragm Type | — | Single monolithic silicon |