MPX2050GP vs MPX2050D Comparación
Comparación detallada lado a lado de MPX2050GP por NXP Semiconductors y MPX2050D por STMicroelectronics. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
NXP Semiconductors
MPX2050GP - 50 kPa Vented Gauge Pressure Sensor | NXP / STMicro
MPX2050GP ✓ ActivoSTMicroelectronics
MPX2050D - 50 kPa Differential Pressure Sensor | STMicroelectronics
MPX2050D ✓ ActivoComparación de especificaciones
| Parámetro | MPX2050GP | MPX2050D |
|---|---|---|
| Marca | NXP Semiconductors | STMicroelectronics |
| Categoría | Pressure Sensors | Pressure Sensors |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $9,85 | $5,40 |
| Pressure Type | Vented Gauge | Differential |
| Operating Pressure Range | 0 kPa to 50 kPa (0 PSI to 7.25 PSI) | 0 kPa to 50 kPa (0 PSI to 7.25 PSI) |
| Maximum Overload Pressure | [DATA_NEEDED: maximum overload pressure] | [DATA_NEEDED: maximum overload pressure] |
| Tipo de salida | Analog Wheatstone Bridge (mV) | Analog voltage (Wheatstone bridge, differential) |
| Full-Scale Output (Typ @ 10 V) | 40 mV (4 mV/V) | — |
| Zero Offset (Typ) | 0 mV | — |
| Supply / Excitation Voltage | 10 V typical (max 16 V per datasheet) | — |
| Linearity | +/-0.05% to +/-0.1% of FSS (typ) | ±0.5% (typical, full scale) |
| Pressure Hysteresis | < 0.1% of FSS | — |
| Temperatura de funcionamiento | 0C to +85C | -40°C to +125°C |
| Storage Temperature | [DATA_NEEDED: storage temperature range] | [DATA_NEEDED: storage temperature range] |
| Response Time | [DATA_NEEDED: response time / bandwidth] | 5 kHz (resonance-limited, [DATA_NEEDED: rise time in ms]) |
| Port Style | Male 0.19" (4.93 mm) Tube | — |
| Encapsulado / Carcasa | 4-SIP Module (Case 344B-01) | — |
| Tipo de montaje | Through-Hole (SIP, vertical) | Through-hole SIP |
| Technology | Silicon Piezoresistive, MEMS | — |
| Diaphragm Material | Monolithic silicon with integrated strain gauge | — |
| Compensation | On-chip temperature compensated and laser-trimmed | — |
| Lead-Free / RoHS | Yes (RoHS compliant) | — |
| Output Voltage Span | — | 0 mV to 40 mV (at 10 V excitation, 50 kPa) |
| Sensitivity (typical) | — | 0.45 mV/kPa (at 10 V excitation) |
| Excitation Voltage | — | 10 V DC (typical), [DATA_NEEDED: max Vex] |
| Accuracy | — | ±0.05% to ±0.2% (0°C to 85°C, Vex = 10 V) |
| Bridge Resistance | — | 1.0 kΩ to 4.5 kΩ (input/output, typical [DATA_NEEDED: exact value]) |
| Encapsulado | — | 4-SIP Module (Unibody, ported) |
| Port Configuration | — | Dual inlet (differential) |
| Estado RoHS | — | Compliant (per ST product page) |
| Nivel MSL | — | [DATA_NEEDED: MSL rating] |