MPX2050GP vs MPX2050D Comparaison
Comparaison détaillée côte à côte de MPX2050GP par NXP Semiconductors et MPX2050D par STMicroelectronics. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
NXP Semiconductors
MPX2050GP - 50 kPa Vented Gauge Pressure Sensor | NXP / STMicro
MPX2050GP ✓ ActifSTMicroelectronics
MPX2050D - 50 kPa Differential Pressure Sensor | STMicroelectronics
MPX2050D ✓ ActifComparaison des spécifications
| Paramètre | MPX2050GP | MPX2050D |
|---|---|---|
| Marque | NXP Semiconductors | STMicroelectronics |
| Catégorie | Pressure Sensors | Pressure Sensors |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $9,85 | $5,40 |
| Pressure Type | Vented Gauge | Differential |
| Operating Pressure Range | 0 kPa to 50 kPa (0 PSI to 7.25 PSI) | 0 kPa to 50 kPa (0 PSI to 7.25 PSI) |
| Maximum Overload Pressure | [DATA_NEEDED: maximum overload pressure] | [DATA_NEEDED: maximum overload pressure] |
| Type de sortie | Analog Wheatstone Bridge (mV) | Analog voltage (Wheatstone bridge, differential) |
| Full-Scale Output (Typ @ 10 V) | 40 mV (4 mV/V) | — |
| Zero Offset (Typ) | 0 mV | — |
| Supply / Excitation Voltage | 10 V typical (max 16 V per datasheet) | — |
| Linearity | +/-0.05% to +/-0.1% of FSS (typ) | ±0.5% (typical, full scale) |
| Pressure Hysteresis | < 0.1% of FSS | — |
| Température de fonctionnement | 0C to +85C | -40°C to +125°C |
| Storage Temperature | [DATA_NEEDED: storage temperature range] | [DATA_NEEDED: storage temperature range] |
| Response Time | [DATA_NEEDED: response time / bandwidth] | 5 kHz (resonance-limited, [DATA_NEEDED: rise time in ms]) |
| Port Style | Male 0.19" (4.93 mm) Tube | — |
| Boîtier / Format | 4-SIP Module (Case 344B-01) | — |
| Type de montage | Through-Hole (SIP, vertical) | Through-hole SIP |
| Technology | Silicon Piezoresistive, MEMS | — |
| Diaphragm Material | Monolithic silicon with integrated strain gauge | — |
| Compensation | On-chip temperature compensated and laser-trimmed | — |
| Lead-Free / RoHS | Yes (RoHS compliant) | — |
| Output Voltage Span | — | 0 mV to 40 mV (at 10 V excitation, 50 kPa) |
| Sensitivity (typical) | — | 0.45 mV/kPa (at 10 V excitation) |
| Excitation Voltage | — | 10 V DC (typical), [DATA_NEEDED: max Vex] |
| Accuracy | — | ±0.05% to ±0.2% (0°C to 85°C, Vex = 10 V) |
| Bridge Resistance | — | 1.0 kΩ to 4.5 kΩ (input/output, typical [DATA_NEEDED: exact value]) |
| Boîtier | — | 4-SIP Module (Unibody, ported) |
| Port Configuration | — | Dual inlet (differential) |
| Statut RoHS | — | Compliant (per ST product page) |
| Niveau MSL | — | [DATA_NEEDED: MSL rating] |