MPXAZ4100AC6U vs MPXAZ4115AC6U Comparación
Comparación detallada lado a lado de MPXAZ4100AC6U por NXP Semiconductors y MPXAZ4115AC6U por NXP Semiconductors. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | MPXAZ4100AC6U | MPXAZ4115AC6U |
|---|---|---|
| Marca | NXP Semiconductors | NXP Semiconductors |
| Categoría | Pressure Sensors | Pressure Sensors |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $5,45 | $10,95 |
| Pressure Type | Absolute | Absolute |
| Operating Pressure Range | 2.9 PSI to 15.23 PSI (20 kPa to 105 kPa) | — |
| Tipo de salida | Analog Voltage (ratiometric) | Analog Voltage |
| Rango de tensión de salida | 0.3 V to 4.9 V | 0.2 V to 4.8 V |
| Tensión de alimentación | 4.85 V to 5.35 V | 4.85 V to 5.35 V (5 V typical) |
| Port Style | Male 0.13 in (3.17 mm) Tube, Top Port | Top port, Male - 0.13 in (3.17 mm) tube stub |
| Encapsulado / Carcasa | 8-SMD, Gull Wing, Top Port | — |
| Termination Style | Surface Mount (PCB) | — |
| Temperatura de funcionamiento | -40 °C to +125 °C | -40 °C to +125 °C |
| Compensated Temperature | 0 °C to 85 °C | — |
| Mounting Feature | Surface Mount | — |
| Tipo de sensor | Piezoresistive Silicon MEMS | — |
| Signal Conditioning | On-chip (amplified, calibrated, temperature-compensated) | — |
| Media Protection | Media-resistant gel | — |
| Automotive Qualified | Yes (engine control / MAP sensing) | — |
| Estado RoHS | [DATA_NEEDED: RoHS status from datasheet] | [DATA_NEEDED: RoHS status not in provided web data] |
| Pressure Range | — | 2.18 PSI to 16.68 PSI (15 kPa to 115 kPa) |
| Accuracy | — | ±1.5% |
| Port Style Detail | — | Barbless |
| Encapsulado | — | 8-SMD, Gull Wing, Top Port |
| Case Outline | — | CASE 482A (Small Outline Package) |
| Tipo de montaje | — | Surface Mount |
| Sensing Technology | — | Piezoresistive silicon, on-chip signal conditioned |
| Características | — | Temperature compensated, calibrated, media resistant |
| Output Impedance | — | [DATA_NEEDED: not in provided web data] |