MPXAZ6115APT1 vs MPXAZ6115AP Comparación
Comparación detallada lado a lado de MPXAZ6115APT1 por NXP Semiconductors y MPXAZ6115AP por NXP Semiconductors. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
NXP Semiconductors
MPXAZ6115AP - 15-115 kPa Absolute Pressure Sensor, Side Port | NXP
MPXAZ6115AP ✓ ActivoComparación de especificaciones
| Parámetro | MPXAZ6115APT1 | MPXAZ6115AP |
|---|---|---|
| Marca | NXP Semiconductors | NXP Semiconductors |
| Categoría | Pressure Sensors | Pressure Sensors |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $8,95 | $10,30 |
| Pressure Type | Absolute | Absolute |
| Operating Pressure Range | 15 kPa to 115 kPa (2.18 PSI to 16.68 PSI) | 15 kPa to 115 kPa (2.18 PSI to 16.68 PSI) |
| Rango de tensión de salida | 0.2 V to 4.7 V | 0.2 V to 4.7 V |
| Tensión de alimentación | 4.75 V to 5.25 V (5 V nominal) | 4.75 V to 5.25 V (5 V nominal) |
| Tipo de salida | Analog, ratiometric | Analog Voltage |
| Port Style | Male 0.13 inch (3.17 mm) tube, side port | Male 0.13 in (3.17 mm) tube, side-mounted |
| Encapsulado | 8-SMD, Gull Wing | 8-SMD, Gull Wing, Side Port (SOP-8) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Temperatura de funcionamiento | -40 C to +125 C | -40 C to +125 C |
| Media Compatibility | Media resistant (non-corrosive gases) | — |
| Accuracy (typ) | [DATA_NEEDED: accuracy %FS] | — |
| Sensitivity | [DATA_NEEDED: V/kPa or mV/kPa] | — |
| Response Time | [DATA_NEEDED: response time ms] | — |
| Current Consumption | [DATA_NEEDED: supply current mA] | — |
| Bridge Type | On-chip silicon strain-gauge (piezo-resistive) | — |
| Signal Conditioning | On-chip, temperature compensated and calibrated | — |
| Estado RoHS | Compliant | Compliant |
| Maximum Overpressure | — | [DATA_NEEDED: maximum overpressure rating] |
| Accuracy | — | +/-1.5% |
| Technology | — | Piezoresistive silicon, monolithic with on-chip bipolar op-amp |
| Temperature Compensation | — | On-chip, -40 C to +125 C |
| Port Material | — | PPS thermoplastic (media resistant) |