MPXAZ6115APT1 vs MPXAZ6115AP Comparaison
Comparaison détaillée côte à côte de MPXAZ6115APT1 par NXP Semiconductors et MPXAZ6115AP par NXP Semiconductors. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
NXP Semiconductors
MPXAZ6115AP - 15-115 kPa Absolute Pressure Sensor, Side Port | NXP
MPXAZ6115AP ✓ ActifComparaison des spécifications
| Paramètre | MPXAZ6115APT1 | MPXAZ6115AP |
|---|---|---|
| Marque | NXP Semiconductors | NXP Semiconductors |
| Catégorie | Pressure Sensors | Pressure Sensors |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $8,95 | $10,30 |
| Pressure Type | Absolute | Absolute |
| Operating Pressure Range | 15 kPa to 115 kPa (2.18 PSI to 16.68 PSI) | 15 kPa to 115 kPa (2.18 PSI to 16.68 PSI) |
| Plage de tension de sortie | 0.2 V to 4.7 V | 0.2 V to 4.7 V |
| Tension d'alimentation | 4.75 V to 5.25 V (5 V nominal) | 4.75 V to 5.25 V (5 V nominal) |
| Type de sortie | Analog, ratiometric | Analog Voltage |
| Port Style | Male 0.13 inch (3.17 mm) tube, side port | Male 0.13 in (3.17 mm) tube, side-mounted |
| Boîtier | 8-SMD, Gull Wing | 8-SMD, Gull Wing, Side Port (SOP-8) |
| Type de montage | Surface Mount | Surface Mount |
| Température de fonctionnement | -40 C to +125 C | -40 C to +125 C |
| Media Compatibility | Media resistant (non-corrosive gases) | — |
| Accuracy (typ) | [DATA_NEEDED: accuracy %FS] | — |
| Sensitivity | [DATA_NEEDED: V/kPa or mV/kPa] | — |
| Response Time | [DATA_NEEDED: response time ms] | — |
| Current Consumption | [DATA_NEEDED: supply current mA] | — |
| Bridge Type | On-chip silicon strain-gauge (piezo-resistive) | — |
| Signal Conditioning | On-chip, temperature compensated and calibrated | — |
| Statut RoHS | Compliant | Compliant |
| Maximum Overpressure | — | [DATA_NEEDED: maximum overpressure rating] |
| Accuracy | — | +/-1.5% |
| Technology | — | Piezoresistive silicon, monolithic with on-chip bipolar op-amp |
| Temperature Compensation | — | On-chip, -40 C to +125 C |
| Port Material | — | PPS thermoplastic (media resistant) |