MPXH6115A6U vs MPXHZ6115A6T1 Comparación
Comparación detallada lado a lado de MPXH6115A6U por NXP Semiconductors y MPXHZ6115A6T1 por NXP Semiconductors. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
NXP Semiconductors
MPXH6115A6U - 15-115 kPa Absolute Pressure Sensor, SOIC-8 | NXP
MPXH6115A6U ✓ ActivoNXP Semiconductors
MPXHZ6115A6T1 - 15-115 kPa Absolute Pressure Sensor | NXP | 8-SOIC
MPXHZ6115A6T1 ✓ ActivoComparación de especificaciones
| Parámetro | MPXH6115A6U | MPXHZ6115A6T1 |
|---|---|---|
| Marca | NXP Semiconductors | NXP Semiconductors |
| Categoría | Pressure Sensors | Pressure Sensors |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $9,95 | $10,85 |
| Pressure Type | Absolute | Absolute |
| Operating Pressure Range | 15 kPa to 115 kPa (2.18 PSI to 16.68 PSI) | 15 kPa to 115 kPa (2.18 PSI to 16.68 PSI) |
| Maximum Over-Pressure | 400 kPa | — |
| Sensitivity | 45.9 mV/kPa (typical) | — |
| Accuracy (0C to 85C) | 1.5 % (max) | — |
| Rango de tensión de salida | 0.2 V to 4.7 V | 0.2 V to 4.7 V (at 5 V supply) |
| Tensión de alimentación | 4.75 V to 5.25 V | 5 V (typical, [DATA_NEEDED: full min/max range]) |
| Corriente de alimentación | 6 mA (typical) | — |
| Temperatura de funcionamiento | -40C to +125C | — |
| Compensated Temperature | 0C to +85C | — |
| Tipo de salida | Analog, ratiometric to VCC | Analog Voltage |
| Encapsulado | 8-SOIC (0.295", 7.50 mm width) with top-side pressure port | 8-SOIC (0.295", 7.50 mm Width), Surface Mount |
| Tipo de montaje | Surface Mount | Surface Mount (PPS thermoplastic) |
| Pressure Port | Vertical/Horizontal axial port (case variant 6) | — |
| Estado RoHS | [DATA_NEEDED: RoHS compliance] | [DATA_NEEDED: RoHS compliance status] |
| Media Compatibility | Dry air, non-corrosive gases only | Media-resistant PPS package; dry gas media recommended |
| Maximum Overpressure | — | 400 kPa (58.02 PSI) |
| Accuracy | — | ±1.5% (0 °C to 85 °C) |
| Temperature Compensation Range | — | -40 °C to +125 °C |
| Rango de temperatura de funcionamiento | — | -40 °C to +125 °C |
| Port Style | — | No Port (media-resistant PPS surface mount) |
| Sensor Technology | — | MEMS silicon strain-gauge with bipolar op-amp signal conditioning |