MRF5S19060NR1 vs MRF5S19060MBR1 Comparación

Comparación detallada lado a lado de MRF5S19060NR1 por NXP Semiconductors y MRF5S19060MBR1 por NXP Semiconductors. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.

NXP Semiconductors
MRF5S19060NR1 MRF5S19060NR1 - 1930-1990 MHz 12W RF Power LDMOS | NXP

MRF5S19060NR1 - 1930-1990 MHz 12W RF Power LDMOS | NXP

MRF5S19060NR1 ✓ Activo
NXP Semiconductors
MRF5S19060MBR1 MRF5S19060MBR1 - 12W RF Power LDMOS 1990MHz | NXP/Freescale

MRF5S19060MBR1 - 12W RF Power LDMOS 1990MHz | NXP/Freescale

MRF5S19060MBR1 Obsolete

Comparación de especificaciones

Parámetro MRF5S19060NR1 MRF5S19060MBR1
Marca NXP Semiconductors NXP Semiconductors
Categoría RF Transceivers RF Amplifiers
Estado del ciclo de vida Activo Obsolete
Estado del stock In Stock In Stock
Precio unitario (USD) $17,95 $16,40
Tipo de transistor LDMOS, N-Channel Enhancement-Mode Lateral MOSFET LDMOS, N-Channel Enhancement-Mode Lateral MOSFET
Frequency Range 1930 MHz to 1990 MHz —
Output Power (Average) 12 W 12 W
Typical Gain 14 dB at 1.99 GHz —
Drain-Source Voltage (Rated) 65 V 65 V
Test Supply Voltage 28 V —
Test Quiescent Current 750 mA —
Encapsulado / Carcasa TO-270 WB-4 (over-molded plastic, 4-lead) —
Estilo de montaje Surface Mount Flange / surface mount with thermal pad
Configuration Single, Common-Source —
Application Base station / broadband commercial amplifier —
Número de pines 5 —
Estado RoHS Compliant —
Lead Free Status Lead Free —
Operating Mode Class AB (typical RF PA) —
Technology — RF Power Field Effect Transistor
Frequency Band — 1.93 GHz to 1.99 GHz
Typical Operating Frequency — 1990 MHz
Nominal Drain Operating Voltage — 28 V
Power Gain — 14 dB
Test Current (Drain) — 750 mA
Drain Current Rating (Leakage Spec) — 10 uA
VSWR Tolerance — 5:1 @ 28 Vdc, 1990 MHz, 12 W avg
Input Matching — Internally matched
ESD Protection — Integrated
Encapsulado — TO-270 WB-4 (overmolded plastic, also listed as TO-272 WB-4)
Package Outline — Case 1486-03, Style 1
Maximum Junction Temperature — 200 degree C
Packaging — Tape and Reel, 500 units per 44 mm 13-inch reel (R1 suffix)
Target Application — PCN/PCS 1900 MHz, 2 x N-CDMA base station PA final/driver stage

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