MRF5S19060NR1 vs MRF5S19060MBR1 对比
详细并排对比 MRF5S19060NR1 出自 NXP Semiconductors 和 MRF5S19060MBR1 出自 NXP Semiconductors。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
NXP Semiconductors
MRF5S19060MBR1 - 12W RF Power LDMOS 1990MHz | NXP/Freescale
MRF5S19060MBR1 Obsolete规格对比
| 参数 | MRF5S19060NR1 | MRF5S19060MBR1 |
|---|---|---|
| 品牌 | NXP Semiconductors | NXP Semiconductors |
| 分类 | RF Transceivers | RF Amplifiers |
| 生命周期状态 | 有效 | Obsolete |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $17.95 | $16.40 |
| 晶体管类型 | LDMOS, N-Channel Enhancement-Mode Lateral MOSFET | LDMOS, N-Channel Enhancement-Mode Lateral MOSFET |
| Frequency Range | 1930 MHz to 1990 MHz | — |
| Output Power (Average) | 12 W | 12 W |
| Typical Gain | 14 dB at 1.99 GHz | — |
| Drain-Source Voltage (Rated) | 65 V | 65 V |
| Test Supply Voltage | 28 V | — |
| Test Quiescent Current | 750 mA | — |
| 封装 / 外壳 | TO-270 WB-4 (over-molded plastic, 4-lead) | — |
| 安装方式 | Surface Mount | Flange / surface mount with thermal pad |
| Configuration | Single, Common-Source | — |
| Application | Base station / broadband commercial amplifier | — |
| 引脚数 | 5 | — |
| RoHS 状态 | Compliant | — |
| Lead Free Status | Lead Free | — |
| Operating Mode | Class AB (typical RF PA) | — |
| Technology | — | RF Power Field Effect Transistor |
| Frequency Band | — | 1.93 GHz to 1.99 GHz |
| Typical Operating Frequency | — | 1990 MHz |
| Nominal Drain Operating Voltage | — | 28 V |
| Power Gain | — | 14 dB |
| Test Current (Drain) | — | 750 mA |
| Drain Current Rating (Leakage Spec) | — | 10 uA |
| VSWR Tolerance | — | 5:1 @ 28 Vdc, 1990 MHz, 12 W avg |
| Input Matching | — | Internally matched |
| ESD Protection | — | Integrated |
| 封装 | — | TO-270 WB-4 (overmolded plastic, also listed as TO-272 WB-4) |
| Package Outline | — | Case 1486-03, Style 1 |
| Maximum Junction Temperature | — | 200 degree C |
| Packaging | — | Tape and Reel, 500 units per 44 mm 13-inch reel (R1 suffix) |
| Target Application | — | PCN/PCS 1900 MHz, 2 x N-CDMA base station PA final/driver stage |