MRF5S9101MR1 vs MRF5S9101NR1 Comparación
Comparación detallada lado a lado de MRF5S9101MR1 por NXP Semiconductors y MRF5S9101NR1 por NXP Semiconductors. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
NXP Semiconductors
MRF5S9101NR1 - 100W, 869-960MHz RF Power LDMOS | NXP Semiconductors
MRF5S9101NR1 ✓ ActivoComparación de especificaciones
| Parámetro | MRF5S9101MR1 | MRF5S9101NR1 |
|---|---|---|
| Marca | NXP Semiconductors | NXP Semiconductors |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Obsolete | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $49,95 | $61,40 |
| Tipo de transistor | LDMOS (N-Channel Enhancement-Mode Lateral MOSFET) | LDMOS, N-Channel Enhancement-Mode Lateral MOSFET |
| Technology | RF Power Field Effect Transistor | — |
| Frequency Range | 869 MHz to 960 MHz | 869 MHz to 960 MHz |
| Test Frequency | 960 MHz | 960 MHz |
| Test Voltage | 26 V | — |
| Test Current (Quiescent) | 700 mA | — |
| Power Output (POUT) | 100 W (CW) | — |
| Power Gain | 17.5 dB at 960 MHz | 17.5 dB (typ at 960 MHz, 26 V, 700 mA) |
| Drain-Source Voltage (Rated) | 68 V | — |
| Drain Current Rating | [DATA_NEEDED: maximum continuous drain current] | — |
| Encapsulado / Carcasa | TO-270 WB-4 (Case 1486-03, Style 1) | TO-270 WB-4 (CASE 1486-03), STYLE 1, plastic overmold |
| Supplier Device Package | TO-270 WB-4 | — |
| Tipo de montaje | Chassis / Flange Mount (through-hole flange) | Surface / Flange Mount (through-board thermal pad) |
| Lead Free Status | Replaced by MRF5S9101NR1/NBR1 (form/fit/function equivalent) | — |
| Estado RoHS | Compliant (lead-free N-suffix variants) | — |
| Temperatura de funcionamiento | [DATA_NEEDED: operating temperature range] | — |
| Storage Temperature | [DATA_NEEDED: storage temperature range] | — |
| Thermal Resistance Junction-to-Case | [DATA_NEEDED: RθJC value] | — |
| Application | GSM / GSM EDGE / N-CDMA base station final-stage PA | GSM / GSM EDGE base station PAs, 869–960 MHz |
| Manufacturer | NXP Semiconductors (formerly Freescale Semiconductor) | NXP Semiconductors (formerly Freescale Semiconductor) |
| Part Number | — | MRF5S9101NR1 |
| Output Power (P1dB) | — | 100 W (typ) |
| Drain Supply Voltage (Vdd) | — | 26 V (nominal), 28 V (max operating) |
| Drain Breakdown Voltage (Vdss) | — | 68 V |
| Quiescent Current (Idq) | — | 700 mA |
| Drain Current (Test) | — | 700 mA |
| Rango de temperatura de funcionamiento | — | [DATA_NEEDED: operating temperature range] |
| Junction Temperature (Max) | — | 200 °C |
| Storage Temperature Range | — | [DATA_NEEDED: storage temperature range] |
| Lead-Free / RoHS | — | Lead-free (N suffix indicates lead-free transition) |
| Thermal Resistance (junction-to-case) | — | [DATA_NEEDED: theta_JC] |