MRF5S9101MR1 vs MRF5S9101NR1 비교
다음의 상세 나란히 비교: MRF5S9101MR1 제조: NXP Semiconductors 및 MRF5S9101NR1 제조: NXP Semiconductors. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
NXP Semiconductors
MRF5S9101NR1 - 100W, 869-960MHz RF Power LDMOS | NXP Semiconductors
MRF5S9101NR1 ✓ 활성사양 비교
| 파라미터 | MRF5S9101MR1 | MRF5S9101NR1 |
|---|---|---|
| 브랜드 | NXP Semiconductors | NXP Semiconductors |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | Obsolete | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $49.95 | $61.40 |
| 트랜지스터 유형 | LDMOS (N-Channel Enhancement-Mode Lateral MOSFET) | LDMOS, N-Channel Enhancement-Mode Lateral MOSFET |
| Technology | RF Power Field Effect Transistor | — |
| Frequency Range | 869 MHz to 960 MHz | 869 MHz to 960 MHz |
| Test Frequency | 960 MHz | 960 MHz |
| Test Voltage | 26 V | — |
| Test Current (Quiescent) | 700 mA | — |
| Power Output (POUT) | 100 W (CW) | — |
| Power Gain | 17.5 dB at 960 MHz | 17.5 dB (typ at 960 MHz, 26 V, 700 mA) |
| Drain-Source Voltage (Rated) | 68 V | — |
| Drain Current Rating | [DATA_NEEDED: maximum continuous drain current] | — |
| 패키지 / 케이스 | TO-270 WB-4 (Case 1486-03, Style 1) | TO-270 WB-4 (CASE 1486-03), STYLE 1, plastic overmold |
| Supplier Device Package | TO-270 WB-4 | — |
| 실장 유형 | Chassis / Flange Mount (through-hole flange) | Surface / Flange Mount (through-board thermal pad) |
| Lead Free Status | Replaced by MRF5S9101NR1/NBR1 (form/fit/function equivalent) | — |
| RoHS 상태 | Compliant (lead-free N-suffix variants) | — |
| 동작 온도 | [DATA_NEEDED: operating temperature range] | — |
| Storage Temperature | [DATA_NEEDED: storage temperature range] | — |
| Thermal Resistance Junction-to-Case | [DATA_NEEDED: RθJC value] | — |
| Application | GSM / GSM EDGE / N-CDMA base station final-stage PA | GSM / GSM EDGE base station PAs, 869–960 MHz |
| Manufacturer | NXP Semiconductors (formerly Freescale Semiconductor) | NXP Semiconductors (formerly Freescale Semiconductor) |
| Part Number | — | MRF5S9101NR1 |
| Output Power (P1dB) | — | 100 W (typ) |
| Drain Supply Voltage (Vdd) | — | 26 V (nominal), 28 V (max operating) |
| Drain Breakdown Voltage (Vdss) | — | 68 V |
| Quiescent Current (Idq) | — | 700 mA |
| Drain Current (Test) | — | 700 mA |
| 동작 온도 범위 | — | [DATA_NEEDED: operating temperature range] |
| Junction Temperature (Max) | — | 200 °C |
| Storage Temperature Range | — | [DATA_NEEDED: storage temperature range] |
| Lead-Free / RoHS | — | Lead-free (N suffix indicates lead-free transition) |
| Thermal Resistance (junction-to-case) | — | [DATA_NEEDED: theta_JC] |