MRF6S18100NBR1 vs MRF6S27015GNR1 Comparación
Comparación detallada lado a lado de MRF6S18100NBR1 por NXP Semiconductors y MRF6S27015GNR1 por NXP Semiconductors. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | MRF6S18100NBR1 | MRF6S27015GNR1 |
|---|---|---|
| Marca | NXP Semiconductors | NXP Semiconductors |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Obsolete | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $68,90 | $9,50 |
| Tipo de transistor | LDMOS, N-Channel Enhancement-Mode Lateral MOSFET | — |
| Application | RF Power Amplifier (GSM/GSM EDGE base station) | — |
| Frequency Range | 1805 MHz to 1990 MHz | — |
| Test Frequency | 1.99 GHz | — |
| Drain-Source Voltage (V(BR)DSS) | 68 V | — |
| Test Supply Voltage (VDD) | 28 V | — |
| Test Drain Current | 900 mA | — |
| Output Power (Pout) | 100 W | — |
| Power Gain (Gps) | 14.5 dB (typical at 1.99 GHz) | — |
| Drain Efficiency | [DATA_NEEDED: drain efficiency %] | — |
| Encapsulado / Carcasa | TO-272 WB-4 | — |
| Supplier Device Package | TO-272 WB-4 | — |
| Tipo de montaje | Surface Mount / Flange Mount | Surface Mount (gull-wing leads) |
| Configuration | Single, common-source | Single-ended, common-source |
| Estado RoHS | Compliant (per NXP product page) | Compliant |
| Operating Mode | Class AB / Class C (per design) | — |
| Manufacturer | — | NXP Semiconductors |
| Part Type | — | RF Power MOSFET, N-Channel, Lateral |
| Technology | — | HV6 Lateral N-Channel Enhancement-Mode MOSFET |
| Encapsulado | — | TO-270-2 (Case 1265-09, Style 1) Gull-Wing |
| Operating Frequency Range | — | 2300 MHz to 2700 MHz |
| Drain-Source Voltage (VDSS) | — | 68 V (max) |
| Operating Drain Voltage (Vdd) | — | 28 V (typical) |
| Output Power (Avg, W-CDMA) | — | 3 W |
| Power Gain (Typ, 2.6 GHz) | — | 14 dB |
| Test Quiescent Current (IDQ) | — | 160 mA |
| Drain Efficiency (Typ) | — | [DATA_NEEDED: drain efficiency %] |
| Channel Temperature (Tch) | — | [DATA_NEEDED: max channel temp C] |
| Thermal Resistance (Rth) | — | [DATA_NEEDED: junction-to-case thermal resistance C/W] |
| Target Waveform | — | Single-carrier W-CDMA, LTE, WiMAX |
| Lead-Free | — | Yes |
| Nivel MSL | — | [DATA_NEEDED: MSL rating] |