MRF6S18100NBR1 vs MRF6S27015GNR1 Vergleich

Detaillierter Direktvergleich von MRF6S18100NBR1 von NXP Semiconductors und MRF6S27015GNR1 von NXP Semiconductors. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

NXP Semiconductors
MRF6S18100NBR1 MRF6S18100NBR1 - 100W RF LDMOS Power Transistor | NXP

MRF6S18100NBR1 - 100W RF LDMOS Power Transistor | NXP

MRF6S18100NBR1 Obsolete
NXP Semiconductors
MRF6S27015GNR1 MRF6S27015GNR1 - 3W 2.6GHz 28V RF Power MOSFET | NXP

MRF6S27015GNR1 - 3W 2.6GHz 28V RF Power MOSFET | NXP

MRF6S27015GNR1 ✓ Aktiv

Spezifikationsvergleich

Parameter MRF6S18100NBR1 MRF6S27015GNR1
Marke NXP Semiconductors NXP Semiconductors
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Obsolete Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $68,90 $9,50
Transistortyp LDMOS, N-Channel Enhancement-Mode Lateral MOSFET —
Application RF Power Amplifier (GSM/GSM EDGE base station) —
Frequency Range 1805 MHz to 1990 MHz —
Test Frequency 1.99 GHz —
Drain-Source Voltage (V(BR)DSS) 68 V —
Test Supply Voltage (VDD) 28 V —
Test Drain Current 900 mA —
Output Power (Pout) 100 W —
Power Gain (Gps) 14.5 dB (typical at 1.99 GHz) —
Drain Efficiency [DATA_NEEDED: drain efficiency %] —
Gehäuse / Bauform TO-272 WB-4 —
Supplier Device Package TO-272 WB-4 —
Montageart Surface Mount / Flange Mount Surface Mount (gull-wing leads)
Configuration Single, common-source Single-ended, common-source
RoHS-Status Compliant (per NXP product page) Compliant
Operating Mode Class AB / Class C (per design) —
Manufacturer — NXP Semiconductors
Part Type — RF Power MOSFET, N-Channel, Lateral
Technology — HV6 Lateral N-Channel Enhancement-Mode MOSFET
Gehäuse — TO-270-2 (Case 1265-09, Style 1) Gull-Wing
Operating Frequency Range — 2300 MHz to 2700 MHz
Drain-Source Voltage (VDSS) — 68 V (max)
Operating Drain Voltage (Vdd) — 28 V (typical)
Output Power (Avg, W-CDMA) — 3 W
Power Gain (Typ, 2.6 GHz) — 14 dB
Test Quiescent Current (IDQ) — 160 mA
Drain Efficiency (Typ) — [DATA_NEEDED: drain efficiency %]
Channel Temperature (Tch) — [DATA_NEEDED: max channel temp C]
Thermal Resistance (Rth) — [DATA_NEEDED: junction-to-case thermal resistance C/W]
Target Waveform — Single-carrier W-CDMA, LTE, WiMAX
Lead-Free — Yes
MSL-Level — [DATA_NEEDED: MSL rating]

Datenblätter & Ressourcen

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