MRF6S19100HR3 vs MRF8S19260HSR6 Comparación

Comparación detallada lado a lado de MRF6S19100HR3 por NXP Semiconductors y MRF8S19260HSR6 por NXP Semiconductors. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.

NXP Semiconductors
MRF6S19100HR3 MRF6S19100HR3 - 22W RF Power MOSFET 1930-1990 MHz N-CDMA | NXP

MRF6S19100HR3 - 22W RF Power MOSFET 1930-1990 MHz N-CDMA | NXP

MRF6S19100HR3 ✓ Activo
NXP Semiconductors
MRF8S19260HSR6 MRF8S19260HSR6 - 74W RF Power LDMOS, 1930-1990 MHz | NXP

MRF8S19260HSR6 - 74W RF Power LDMOS, 1930-1990 MHz | NXP

MRF8S19260HSR6 ✓ Activo

Comparación de especificaciones

Parámetro MRF6S19100HR3 MRF8S19260HSR6
Marca NXP Semiconductors NXP Semiconductors
Categoría MOSFETs MOSFETs
Estado del ciclo de vida Activo Activo
Estado del stock In Stock In Stock
Precio unitario (USD) $95,00 $124,00
Manufacturer NXP Semiconductors (formerly Freescale Semiconductor) NXP Semiconductors (formerly Freescale)
Part Number MRF6S19100HR3 MRF8S19260HSR6
Device Type RF Power Field Effect Transistor (N-Channel Enhancement-Mode Lateral MOSFET) —
Technology N-Channel LDMOS —
Operating Frequency Range 1930 MHz to 1990 MHz —
Output Power (P1dB, Avg) 22 W (N-CDMA Average) —
Power Gain 16.1 dB (typical at 1.99 GHz) 18.2 dB at 1.99 GHz
Drain Voltage (Vds) 28 V —
Quiescent Drain Current (Idq) 900 mA (typical) —
Encapsulado / Carcasa NI-780H-2L (Case 465-06, Style 1) NI-1230S-8 (ceramic air-cavity bolt-down)
Tipo de montaje Flanged / Screw-mount with ceramic body Chassis / Flange Mount (through-hole RF bolt-down)
Lead Style Dual blade (HR3 suffix) —
Operating Mode Class AB (linear) Class AB and Class C capable
Target Applications N-CDMA base station, TDMA, CDMA, multicarrier amplifier, PCS/cellular radio, WLL —
Estado RoHS Compliant (per NXP product page) Compliant
Tipo de transistor — LDMOS, N-Channel, Dual
Frequency Band — 1930 MHz to 1990 MHz
Test Frequency — 1.99 GHz
Drain-Source Voltage (Max Rated) — 65 V
Operating Drain Voltage (Typical) — 30 V
Continuous Drain Current (Test) — 1.6 A
Output Power (CW / Avg) — 74 W average
Lead Free Status — Compliant (per DigiKey listing)
Application — W-CDMA, CDMA, multi-carrier cellular base station PA

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