MRF6S19100HR3 vs MRF8S19260HSR6 比較
詳細な並列比較: MRF6S19100HR3 メーカー: NXP Semiconductors および MRF8S19260HSR6 メーカー: NXP Semiconductors。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
NXP Semiconductors
MRF6S19100HR3 - 22W RF Power MOSFET 1930-1990 MHz N-CDMA | NXP
MRF6S19100HR3 ✓ 生産中仕様比較
| パラメータ | MRF6S19100HR3 | MRF8S19260HSR6 |
|---|---|---|
| ブランド | NXP Semiconductors | NXP Semiconductors |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $95.00 | $124.00 |
| Manufacturer | NXP Semiconductors (formerly Freescale Semiconductor) | NXP Semiconductors (formerly Freescale) |
| Part Number | MRF6S19100HR3 | MRF8S19260HSR6 |
| Device Type | RF Power Field Effect Transistor (N-Channel Enhancement-Mode Lateral MOSFET) | — |
| Technology | N-Channel LDMOS | — |
| Operating Frequency Range | 1930 MHz to 1990 MHz | — |
| Output Power (P1dB, Avg) | 22 W (N-CDMA Average) | — |
| Power Gain | 16.1 dB (typical at 1.99 GHz) | 18.2 dB at 1.99 GHz |
| Drain Voltage (Vds) | 28 V | — |
| Quiescent Drain Current (Idq) | 900 mA (typical) | — |
| パッケージ / ケース | NI-780H-2L (Case 465-06, Style 1) | NI-1230S-8 (ceramic air-cavity bolt-down) |
| 実装タイプ | Flanged / Screw-mount with ceramic body | Chassis / Flange Mount (through-hole RF bolt-down) |
| Lead Style | Dual blade (HR3 suffix) | — |
| Operating Mode | Class AB (linear) | Class AB and Class C capable |
| Target Applications | N-CDMA base station, TDMA, CDMA, multicarrier amplifier, PCS/cellular radio, WLL | — |
| RoHS ステータス | Compliant (per NXP product page) | Compliant |
| トランジスタタイプ | — | LDMOS, N-Channel, Dual |
| Frequency Band | — | 1930 MHz to 1990 MHz |
| Test Frequency | — | 1.99 GHz |
| Drain-Source Voltage (Max Rated) | — | 65 V |
| Operating Drain Voltage (Typical) | — | 30 V |
| Continuous Drain Current (Test) | — | 1.6 A |
| Output Power (CW / Avg) | — | 74 W average |
| Lead Free Status | — | Compliant (per DigiKey listing) |
| Application | — | W-CDMA, CDMA, multi-carrier cellular base station PA |