MRF6S21050LR5 vs MRF6S21050LSR5 Comparación
Comparación detallada lado a lado de MRF6S21050LR5 por NXP Semiconductors y MRF6S21050LSR5 por NXP Semiconductors. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
NXP Semiconductors
MRF6S21050LSR5 - 11.5W W-CDMA RF Power MOSFET | NXP | NI-400S
MRF6S21050LSR5 ✓ ActivoComparación de especificaciones
| Parámetro | MRF6S21050LR5 | MRF6S21050LSR5 |
|---|---|---|
| Marca | NXP Semiconductors | NXP Semiconductors |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $21,40 | $51,40 |
| Tipo de transistor | N-Channel RF Power MOSFET (LDMOS) | N-Channel Enhancement-Mode Lateral MOSFET |
| Technology | HV6 LDMOS | LDMOS (Laterally Diffused MOSFET) |
| Drain-Source Voltage (Vdss) | 28 V | — |
| Continuous Drain Current (Id) | 450 mA | — |
| Output Power (Pout) | 11.5 W | 11.5 W CW |
| Power Gain (Gp) | 16 dB at 2.16 GHz | — |
| Operating Frequency | 2.16 GHz (W-CDMA band) | — |
| Test Conditions | 2.16 GHz, 28 V, W-CDMA modulation | — |
| Encapsulado / Carcasa | NI-400 (ceramic flanged) | NI-400S (ceramic, 2-flange) |
| Tipo de montaje | Flange mount, chassis-mount | Surface Mount / Screw-Mount |
| Configuration | Single N-channel | Single, Common Source |
| Capacitancia de entrada | [DATA_NEEDED: input capacitance] | — |
| Capacitancia de salida | [DATA_NEEDED: output capacitance] | — |
| Thermal Resistance (Rthj-c) | [DATA_NEEDED: junction-to-case thermal resistance] | — |
| Rango de temperatura de funcionamiento | -40C to +150C (junction) | — |
| Nivel MSL | Not applicable (ceramic flanged) | — |
| Estado RoHS | Compliant (per distributor listing) | Compliant |
| ESD Protection | Yes (integrated, per device family) | — |
| Manufacturer | — | NXP Semiconductors (formerly Freescale Semiconductor) |
| Drain-Source Voltage (VDS) Maximum | — | 65 V |
| Gate-Source Voltage (VGS) Maximum | — | [DATA_NEEDED: VGS max rating] |
| Nominal Operating Drain Voltage | — | 28 V |
| Typical Operating Frequency | — | 2.16 GHz (2110-2170 MHz W-CDMA band) |
| Power Gain (Gps) | — | 16 dB typical at 2.16 GHz |
| Drain Current (ID) at Test | — | 450 mA |
| Application | — | W-CDMA, TDMA, CDMA, multicarrier base-station PA |
| Lead-Free | — | Yes |
| Operating Mode | — | Class AB |
| MSL Rating | — | [DATA_NEEDED: MSL level] |