MRF6S21050LR5 vs MRF6S21050LSR5 Comparação

Comparação detalhada lado a lado de MRF6S21050LR5 por NXP Semiconductors e MRF6S21050LSR5 por NXP Semiconductors. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.

NXP Semiconductors
MRF6S21050LR5 MRF6S21050LR5 - 11.5W RF MOSFET 28V 2.16GHz NI-400 | NXP

MRF6S21050LR5 - 11.5W RF MOSFET 28V 2.16GHz NI-400 | NXP

MRF6S21050LR5 ✓ Ativo
NXP Semiconductors
MRF6S21050LSR5 MRF6S21050LSR5 - 11.5W W-CDMA RF Power MOSFET | NXP | NI-400S

MRF6S21050LSR5 - 11.5W W-CDMA RF Power MOSFET | NXP | NI-400S

MRF6S21050LSR5 ✓ Ativo

Comparação de especificações

Parâmetro MRF6S21050LR5 MRF6S21050LSR5
Marca NXP Semiconductors NXP Semiconductors
Categoria MOSFETs MOSFETs
Status do ciclo de vida Ativo Ativo
Status do estoque In Stock In Stock
Preço unitário (USD) $21,40 $51,40
Tipo de transistor N-Channel RF Power MOSFET (LDMOS) N-Channel Enhancement-Mode Lateral MOSFET
Technology HV6 LDMOS LDMOS (Laterally Diffused MOSFET)
Drain-Source Voltage (Vdss) 28 V —
Continuous Drain Current (Id) 450 mA —
Output Power (Pout) 11.5 W 11.5 W CW
Power Gain (Gp) 16 dB at 2.16 GHz —
Operating Frequency 2.16 GHz (W-CDMA band) —
Test Conditions 2.16 GHz, 28 V, W-CDMA modulation —
Encapsulamento / Caixa NI-400 (ceramic flanged) NI-400S (ceramic, 2-flange)
Tipo de montagem Flange mount, chassis-mount Surface Mount / Screw-Mount
Configuration Single N-channel Single, Common Source
Capacitância de entrada [DATA_NEEDED: input capacitance] —
Capacitância de saída [DATA_NEEDED: output capacitance] —
Thermal Resistance (Rthj-c) [DATA_NEEDED: junction-to-case thermal resistance] —
Faixa de temperatura de operação -40C to +150C (junction) —
Nível MSL Not applicable (ceramic flanged) —
Status RoHS Compliant (per distributor listing) Compliant
ESD Protection Yes (integrated, per device family) —
Manufacturer — NXP Semiconductors (formerly Freescale Semiconductor)
Drain-Source Voltage (VDS) Maximum — 65 V
Gate-Source Voltage (VGS) Maximum — [DATA_NEEDED: VGS max rating]
Nominal Operating Drain Voltage — 28 V
Typical Operating Frequency — 2.16 GHz (2110-2170 MHz W-CDMA band)
Power Gain (Gps) — 16 dB typical at 2.16 GHz
Drain Current (ID) at Test — 450 mA
Application — W-CDMA, TDMA, CDMA, multicarrier base-station PA
Lead-Free — Yes
Operating Mode — Class AB
MSL Rating — [DATA_NEEDED: MSL level]

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