MRF8P26080HSR3 vs MRF8P23080HSR5 Comparación
Comparación detallada lado a lado de MRF8P26080HSR3 por NXP Semiconductors y MRF8P23080HSR5 por NXP Semiconductors. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
NXP Semiconductors
MRF8P26080HSR3 - 14W, 2.6GHz W-CDMA/LTE RF Power MOSFET | NXP
MRF8P26080HSR3 ✓ Activo
Comparación de especificaciones
| Parámetro | MRF8P26080HSR3 | MRF8P23080HSR5 |
|---|---|---|
| Marca | NXP Semiconductors | NXP Semiconductors |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $99,85 | $55,80 |
| Tipo de transistor | N-Channel Enhancement-Mode Lateral MOSFET | — |
| Technology | Gen8 LDMOS (Silicon, Lateral) | Laterally Diffused MOS (LDMOS) |
| Frequency Range | 2500 MHz to 2700 MHz | — |
| Average Output Power (P3dB) | 14 W (W-CDMA, single-carrier) | — |
| Peak Output Power (CW) | 80 W | — |
| Drain-Source Voltage (VDSS max) | 65 V | — |
| Operating Drain Voltage (VDD) | 28 V nominal | — |
| Test Mode | Typical Doherty Single-Carrier W-CDMA | — |
| Application Class | Class AB or Class C capable | — |
| Modulation Formats | W-CDMA, LTE, OFDM, multi-carrier | — |
| Encapsulado | NI-780S-4 (ceramic, flange-mount, air-cavity) | — |
| Tipo de montaje | Through-hole flange-mount with screw attachment | Chassis / Flange Mount |
| Lead Finish | Gold-plated (NiPdAu) | — |
| Lead-Free / RoHS | Compliant | — |
| Rango de temperatura de funcionamiento | -40C to +150C (junction) | — |
| Manufacturer | — | NXP Semiconductors |
| Product Type | — | RF Power MOSFET (Lateral N-Channel) |
| Series | — | Airfast HV8 |
| Frequency Band | — | 2300 to 2400 MHz |
| Test Frequency | — | 2.3 GHz |
| Target Waveforms | — | W-CDMA, LTE |
| Average Output Power | — | 16 W |
| Peak Output Power | — | 80 W |
| Power Gain (typical) | — | 14.6 dB at 2.3 GHz |
| Drain-Source Voltage (Vds) Test Condition | — | 28 V |
| Drain Current (Id) Test Condition | — | 280 mA |
| Encapsulado / Carcasa | — | NI-780S-4L |
| Operating Mode | — | Class AB |
| Channel Polarity | — | N-Channel |
| Compliance | — | RoHS compliant per NXP product page |