MRF8P26080HSR3 vs MRF8P23080HSR5 비교
다음의 상세 나란히 비교: MRF8P26080HSR3 제조: NXP Semiconductors 및 MRF8P23080HSR5 제조: NXP Semiconductors. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
NXP Semiconductors
MRF8P26080HSR3 - 14W, 2.6GHz W-CDMA/LTE RF Power MOSFET | NXP
MRF8P26080HSR3 ✓ 활성
사양 비교
| 파라미터 | MRF8P26080HSR3 | MRF8P23080HSR5 |
|---|---|---|
| 브랜드 | NXP Semiconductors | NXP Semiconductors |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $99.85 | $55.80 |
| 트랜지스터 유형 | N-Channel Enhancement-Mode Lateral MOSFET | — |
| Technology | Gen8 LDMOS (Silicon, Lateral) | Laterally Diffused MOS (LDMOS) |
| Frequency Range | 2500 MHz to 2700 MHz | — |
| Average Output Power (P3dB) | 14 W (W-CDMA, single-carrier) | — |
| Peak Output Power (CW) | 80 W | — |
| Drain-Source Voltage (VDSS max) | 65 V | — |
| Operating Drain Voltage (VDD) | 28 V nominal | — |
| Test Mode | Typical Doherty Single-Carrier W-CDMA | — |
| Application Class | Class AB or Class C capable | — |
| Modulation Formats | W-CDMA, LTE, OFDM, multi-carrier | — |
| 패키지 | NI-780S-4 (ceramic, flange-mount, air-cavity) | — |
| 실장 유형 | Through-hole flange-mount with screw attachment | Chassis / Flange Mount |
| Lead Finish | Gold-plated (NiPdAu) | — |
| Lead-Free / RoHS | Compliant | — |
| 동작 온도 범위 | -40C to +150C (junction) | — |
| Manufacturer | — | NXP Semiconductors |
| Product Type | — | RF Power MOSFET (Lateral N-Channel) |
| Series | — | Airfast HV8 |
| Frequency Band | — | 2300 to 2400 MHz |
| Test Frequency | — | 2.3 GHz |
| Target Waveforms | — | W-CDMA, LTE |
| Average Output Power | — | 16 W |
| Peak Output Power | — | 80 W |
| Power Gain (typical) | — | 14.6 dB at 2.3 GHz |
| Drain-Source Voltage (Vds) Test Condition | — | 28 V |
| Drain Current (Id) Test Condition | — | 280 mA |
| 패키지 / 케이스 | — | NI-780S-4L |
| Operating Mode | — | Class AB |
| Channel Polarity | — | N-Channel |
| Compliance | — | RoHS compliant per NXP product page |