MRF8S21100HSR3 vs MRF6S21100HR3 Comparación
Comparación detallada lado a lado de MRF8S21100HSR3 por NXP Semiconductors y MRF6S21100HR3 por NXP Semiconductors. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
NXP Semiconductors
MRF8S21100HSR3 - 100W RF Power MOSFET, 2.11-2.17 GHz | NXP
MRF8S21100HSR3 ✓ ActivoComparación de especificaciones
| Parámetro | MRF8S21100HSR3 | MRF6S21100HR3 |
|---|---|---|
| Marca | NXP Semiconductors | NXP Semiconductors |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $65,00 | $38,95 |
| Tipo de transistor | N-Channel Enhancement-Mode Lateral MOSFET | LDMOS (N-Channel Enhancement-Mode Lateral MOSFET) |
| Technology | LDMOS (Laterally Diffused MOSFET) | — |
| Drain-Source Voltage (V(BR)DSS) | 65 V | — |
| Operating Drain Voltage (VDD) | 28 V nominal | — |
| Frequency Range | 2110 MHz to 2170 MHz | — |
| Test Frequency | 2.14 GHz | — |
| Output Power (CW, typical) | 100 W | — |
| Average Output Power (W-CDMA) | 24 W | — |
| Power Gain (typ) | 18.3 dB at 2.14 GHz | — |
| Drain Current (ID, max) | [DATA_NEEDED: max ID rating] | — |
| Encapsulado / Carcasa | NI-780S (Case 465A-06), 3-pin ceramic flange | — |
| Configuration | Single, push-pull N/A | Single |
| Tipo de montaje | Chassis / flange mount, screw-down | Surface Mount / bolt-down flange |
| Operating Class | Class AB or Class C | — |
| Application | W-CDMA, LTE base-station power amplifiers | — |
| Estado RoHS | Compliant (per NXP product family) | [DATA_NEEDED: explicit RoHS compliance statement] |
| Lead-Free | Yes | — |
| Frequency Band | — | 2.11 GHz to 2.17 GHz |
| Output Power (Average) | — | 23 W (W-CDMA, CW equivalent ~100 W PEP) |
| Power Gain (Typ) | — | 15.9 dB at 2.14 GHz |
| Drain-Source Voltage Rating (VDS max) | — | 68 V |
| Test Supply Voltage (VDD) | — | 28 V |
| Quiescent Drain Current (IDQ) | — | 950 mA |
| Test Drain Current | — | 950 mA |
| Encapsulado | — | NI-780H-2L (ceramic flange) |
| Maximum Power Dissipation (Abs) | — | 388 W |
| Operating Mode | — | Class AB (PCN/PCS/cellular, WLL, TD-SCDMA) |
| Terminal Position | — | Dual |
| Lead Free Status | — | [DATA_NEEDED: RoHS/lead-free explicit statement] |