MRF8S21100HSR3 vs MRF6S21100HR3 Vergleich
Detaillierter Direktvergleich von MRF8S21100HSR3 von NXP Semiconductors und MRF6S21100HR3 von NXP Semiconductors. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
NXP Semiconductors
MRF8S21100HSR3 - 100W RF Power MOSFET, 2.11-2.17 GHz | NXP
MRF8S21100HSR3 ✓ AktivSpezifikationsvergleich
| Parameter | MRF8S21100HSR3 | MRF6S21100HR3 |
|---|---|---|
| Marke | NXP Semiconductors | NXP Semiconductors |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $65,00 | $38,95 |
| Transistortyp | N-Channel Enhancement-Mode Lateral MOSFET | LDMOS (N-Channel Enhancement-Mode Lateral MOSFET) |
| Technology | LDMOS (Laterally Diffused MOSFET) | — |
| Drain-Source Voltage (V(BR)DSS) | 65 V | — |
| Operating Drain Voltage (VDD) | 28 V nominal | — |
| Frequency Range | 2110 MHz to 2170 MHz | — |
| Test Frequency | 2.14 GHz | — |
| Output Power (CW, typical) | 100 W | — |
| Average Output Power (W-CDMA) | 24 W | — |
| Power Gain (typ) | 18.3 dB at 2.14 GHz | — |
| Drain Current (ID, max) | [DATA_NEEDED: max ID rating] | — |
| Gehäuse / Bauform | NI-780S (Case 465A-06), 3-pin ceramic flange | — |
| Configuration | Single, push-pull N/A | Single |
| Montageart | Chassis / flange mount, screw-down | Surface Mount / bolt-down flange |
| Operating Class | Class AB or Class C | — |
| Application | W-CDMA, LTE base-station power amplifiers | — |
| RoHS-Status | Compliant (per NXP product family) | [DATA_NEEDED: explicit RoHS compliance statement] |
| Lead-Free | Yes | — |
| Frequency Band | — | 2.11 GHz to 2.17 GHz |
| Output Power (Average) | — | 23 W (W-CDMA, CW equivalent ~100 W PEP) |
| Power Gain (Typ) | — | 15.9 dB at 2.14 GHz |
| Drain-Source Voltage Rating (VDS max) | — | 68 V |
| Test Supply Voltage (VDD) | — | 28 V |
| Quiescent Drain Current (IDQ) | — | 950 mA |
| Test Drain Current | — | 950 mA |
| Gehäuse | — | NI-780H-2L (ceramic flange) |
| Maximum Power Dissipation (Abs) | — | 388 W |
| Operating Mode | — | Class AB (PCN/PCS/cellular, WLL, TD-SCDMA) |
| Terminal Position | — | Dual |
| Lead Free Status | — | [DATA_NEEDED: RoHS/lead-free explicit statement] |