MRF8S9102NR3 vs MRF8S9170NR3 Comparación
Comparación detallada lado a lado de MRF8S9102NR3 por NXP Semiconductors y MRF8S9170NR3 por NXP Semiconductors. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | MRF8S9102NR3 | MRF8S9170NR3 |
|---|---|---|
| Marca | NXP Semiconductors | NXP Semiconductors |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $24,10 | $38,50 |
| Manufacturer | NXP Semiconductors (formerly Freescale) | NXP Semiconductors |
| Part Family | MRF8S9102N / HV8 series | — |
| Tipo de transistor | N-Channel Lateral Enhancement-Mode MOSFET | LDMOS, N-Channel Enhancement-Mode Lateral MOSFET |
| Application | RF Power Amplifier, W-CDMA base station | — |
| Operating Frequency Range | 865 MHz to 960 MHz | — |
| Test Frequency | 920 MHz | — |
| Drain-Source Operating Voltage (VDS) | 28 V (typical test condition) | — |
| Drain-Source Breakdown Voltage (VDSS) | 70 V (max) | — |
| Average Output Power (POUT) | 28 W | — |
| Drain Current (ID) at bias | 750 mA | — |
| Power Gain (Gp) | 23.1 dB | — |
| Modulation Format | Single W-CDMA (also Class AB/C capable) | — |
| Encapsulado | OM-780-2 (3-pin ceramic, flange mount) | OM-780-2 (ceramic flange) |
| Tipo de montaje | Chassis / flange mount with bolt-down thermal pad | Surface Mount / Flange Mount (bolt-down thermal pad) |
| Recuento de pines | 3 | — |
| Estado RoHS | [DATA_NEEDED: rohs compliance] | — |
| Operating Mode | Class AB or Class C | — |
| Technology | — | RF Power LDMOS |
| Frequency Range | — | 920 MHz to 960 MHz |
| Output Power (Average, W-CDMA) | — | 50 W |
| Power Gain (Typical) | — | 19.3 dB at 920 MHz, 28 V, 1 A quiescent bias |
| Drain-Source Voltage Rating (Vdss) | — | 70 V |
| Operating Drain Voltage (Test Condition) | — | 28 V |
| Quiescent Bias Current (Idq, Test Condition) | — | 1 A |
| Drain Current (Operating) | — | [DATA_NEEDED: typical operating Id at 50 W Pout] |
| Temperatura de funcionamiento | — | [DATA_NEEDED: Tj max and operating range from datasheet] |
| Class of Operation | — | Class AB, Class C (W-CDMA) |
| Lead-Free / RoHS | — | Lead Free (per digchip listing) |
| ESD Protection | — | [DATA_NEEDED: ESD class rating from datasheet] |
| Impedance Characterization | — | Series-equivalent large-signal impedance parameters provided |
| Test Conditions Note | — | 100% PAR tested for guaranteed output power capability |