MRF8S9102NR3 vs MRF8S9170NR3 对比
详细并排对比 MRF8S9102NR3 出自 NXP Semiconductors 和 MRF8S9170NR3 出自 NXP Semiconductors。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | MRF8S9102NR3 | MRF8S9170NR3 |
|---|---|---|
| 品牌 | NXP Semiconductors | NXP Semiconductors |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $24.10 | $38.50 |
| Manufacturer | NXP Semiconductors (formerly Freescale) | NXP Semiconductors |
| Part Family | MRF8S9102N / HV8 series | — |
| 晶体管类型 | N-Channel Lateral Enhancement-Mode MOSFET | LDMOS, N-Channel Enhancement-Mode Lateral MOSFET |
| Application | RF Power Amplifier, W-CDMA base station | — |
| Operating Frequency Range | 865 MHz to 960 MHz | — |
| Test Frequency | 920 MHz | — |
| Drain-Source Operating Voltage (VDS) | 28 V (typical test condition) | — |
| Drain-Source Breakdown Voltage (VDSS) | 70 V (max) | — |
| Average Output Power (POUT) | 28 W | — |
| Drain Current (ID) at bias | 750 mA | — |
| Power Gain (Gp) | 23.1 dB | — |
| Modulation Format | Single W-CDMA (also Class AB/C capable) | — |
| 封装 | OM-780-2 (3-pin ceramic, flange mount) | OM-780-2 (ceramic flange) |
| 安装类型 | Chassis / flange mount with bolt-down thermal pad | Surface Mount / Flange Mount (bolt-down thermal pad) |
| 引脚数量 | 3 | — |
| RoHS 状态 | [DATA_NEEDED: rohs compliance] | — |
| Operating Mode | Class AB or Class C | — |
| Technology | — | RF Power LDMOS |
| Frequency Range | — | 920 MHz to 960 MHz |
| Output Power (Average, W-CDMA) | — | 50 W |
| Power Gain (Typical) | — | 19.3 dB at 920 MHz, 28 V, 1 A quiescent bias |
| Drain-Source Voltage Rating (Vdss) | — | 70 V |
| Operating Drain Voltage (Test Condition) | — | 28 V |
| Quiescent Bias Current (Idq, Test Condition) | — | 1 A |
| Drain Current (Operating) | — | [DATA_NEEDED: typical operating Id at 50 W Pout] |
| 工作温度 | — | [DATA_NEEDED: Tj max and operating range from datasheet] |
| Class of Operation | — | Class AB, Class C (W-CDMA) |
| Lead-Free / RoHS | — | Lead Free (per digchip listing) |
| ESD Protection | — | [DATA_NEEDED: ESD class rating from datasheet] |
| Impedance Characterization | — | Series-equivalent large-signal impedance parameters provided |
| Test Conditions Note | — | 100% PAR tested for guaranteed output power capability |