MT29F1G08ABAEAWP-IT:E vs MX30LF1GE8AB-TI-TR Comparación
Comparación detallada lado a lado de MT29F1G08ABAEAWP-IT:E por Micron Technology y MX30LF1GE8AB-TI-TR por Macronix. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Micron Technology
MT29F1G08ABAEAWP-IT:E - 1Gbit SLC NAND Flash | Micron
MT29F1G08ABAEAWP-IT:E ✓ ActivoMacronix
MX30LF1GE8AB-TI-TR - 1Gbit 3V SLC NAND Flash, x8, TSOP-48 | Macronix
MX30LF1GE8AB-TI-TR ✓ ActivoComparación de especificaciones
| Parámetro | MT29F1G08ABAEAWP-IT:E | MX30LF1GE8AB-TI-TR |
|---|---|---|
| Marca | Micron Technology | Macronix |
| Categoría | Memory ICs | Memory ICs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $1,60 | $1,89 |
| Tamaño de memoria | 1 Gbit (128 MB) | — |
| Organización de memoria | 128M x 8 | — |
| Interfaz | Parallel | — |
| Tensión de alimentación | 3.3 V | — |
| Access Time | 25 ns | — |
| Page Size | 2048 bytes + 64 bytes spare | 2112 bytes (2048 data + 64 spare) |
| Block Size | 128 KB | 64 pages (128 KB + 4 KB spare) |
| Program Time | 200 us (typical) | — |
| Erase Time | 2 ms (typical) | — |
| Endurance | 100K program/erase cycles | — |
| Data Retention | 10 years | 10 years (typical) |
| Temperatura de funcionamiento | -40C to +85C | -40 C to +85 C (industrial) |
| Encapsulado | TSOP-48 | 48-pin TSOP-I (Type I) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Estado RoHS | Compliant | Compliant |
| Tipo de memoria | — | Non-Volatile NAND Flash (SLC) |
| Memory Organization | — | 128 M x 8 |
| Density | — | 1 Gbit (1024 Mbit) |
| Tipo de interfaz | — | Parallel Asynchronous (ONFI 1.0) |
| Cell Technology | — | Single-Level Cell (SLC) |
| Number of Blocks | — | 1024 |
| Access Time (tR) | — | 20 ns / 25 ns (grade dependent) |
| Supply Voltage (VCC) | — | 2.7 V to 3.6 V |
| Active Read Current (ICC1) | — | 15 mA typical |
| Program / Erase Current (ICC2) | — | 15 mA typical |
| Program / Erase Endurance | — | 100 K cycles per block (typical) |
| ECC Architecture | — | ECC-Free (external host ECC required) |
| Compliance Standard | — | ONFI 1.0 |
| Bad Block Mark | — | 00h on 1st and 2nd page (per datasheet v1.3) |
| Bad Block Indicator | — | Marked at 1st and 2nd page (00h) per datasheet v1.3 |
| R/B# Power-On Delay | — | 100 us (per datasheet v1.3) |